A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior
- Northwestern Univ., Evanston, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. College London, Bloomsbury (United Kingdom)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); George Mason Univ., Fairfax, VA (United States)
- Donostia International Physics Center (Spain); Univ. of the Basque Country, Donostia (Spain)
- Donostia International Physics Center (Spain); Univ. of the Basque Country, Donostia (Spain); Centro Mixto CSIC-UPV/EHU, Donostia (Spain)
- Princeton Univ., NJ (United States)
- Donostia International Physics Center (Spain)n; Ikerbasque Basque Foundation for Science (Spain)
- Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; yet, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. In this work, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the Gamma-Z direction of the Brillouin zone. Moreover, we show that Ir2In8S has a high electron carrier mobility of similar to 10 000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of similar to 6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
- Grant/Contract Number:
- AC02-06CH11357; SC0014520
- OSTI ID:
- 1581283
- Alternate ID(s):
- OSTI ID: 1776865
- Journal Information:
- Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 48 Vol. 141; ISSN 0002-7863
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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