Controlling Nanoscale Thermal Expansion of Monolayer Transition Metal Dichalcogenides by Alloy Engineering

Hu, Xuan; Hemmat, Zahra; Majidi, Leily; Cavin, John; Mishra, Rohan; Salehi‐Khojin, Amin; Ogut, Serdar; Klie, Robert F.

doi:10.1002/smll.201905892

Title: Controlling Nanoscale Thermal Expansion of Monolayer Transition Metal Dichalcogenides by Alloy Engineering

Journal Article · Thu Dec 12 00:00:00 EST 2019 · Small

DOI:https://doi.org/10.1002/smll.201905892· OSTI ID:1579402

Hu, Xuan ^[1]; Hemmat, Zahra ^[2]; Majidi, Leily ^[2]; Cavin, John ^[3]; Mishra, Rohan ^[4]; Salehi‐Khojin, Amin ^[2]; Ogut, Serdar ^[1]; Klie, Robert F. ^[1]

Department of Physics University of Illinois at Chicago Chicago IL 60607 USA
Department of Mechanical and Industrial Engineering University of Illinois at Chicago Chicago IL 60607 USA
Department of Physics Washington University in St. Louis St. Louis MO 63130 USA
Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering Washington University in St. Louis St. Louis MO 63130 USA

Abstract 2D materials, such as transition metal dichalcogenides (TMDs), graphene, and boron nitride, are seen as promising materials for future high power/high frequency electronics. However, the large difference in the thermal expansion coefficient (TEC) between many of these 2D materials could impose a serious challenge for the design of monolayer‐material‐based nanodevices. To address this challenge, alloy engineering of TMDs is used to tailor their TECs. Here, in situ heating experiments in a scanning transmission electron microscope are combined with electron energy‐loss spectroscopy and first‐principles modeling of monolayer Mo ₁₋ _x W _x S ₂ with different alloying concentrations to determine the TEC. Significant changes in the TEC are seen as a function of chemical composition in Mo ₁₋ _x W _x S ₂ , with the smallest TEC being reported for a configuration with the highest entropy. This study provides key insights into understanding the nanoscale phenomena that control TEC values of 2D materials.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐05CH11231

OSTI ID:: 1579402

Journal Information:: Small, Journal Name: Small Vol. 16 Journal Issue: 3; ISSN 1613-6810

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 7 works

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References (23)

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Atomap: a new software tool for the automated analysis of atomic resolution images using two-dimensional Gaussian fitting Nord, Magnus; Vullum, Per Erik; MacLaren, Ian Advanced Structural and Chemical Imaging, Vol. 3, Issue 1 https://doi.org/10.1186/s40679-017-0042-5	journal	February 2017
Tunnel field-effect transistors as energy-efficient electronic switches Ionescu, Adrian M.; Riel, Heike Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10679	journal	November 2011
Ordered and Disordered Phases in Mo1−xWxS2 Monolayer Tan, Wei; Wei, Zhipeng; Liu, Xiaomin Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-15286-9	journal	November 2017
Tunable spin–orbit coupling and symmetry-protected edge states in graphene/WS ₂ Yang, Bowen; Tu, Min-Feng; Kim, Jeongwoo 2D Materials, Vol. 3, Issue 3 https://doi.org/10.1088/2053-1583/3/3/031012	journal	September 2016
Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells Singh, Eric; Kim, Ki Seok; Yeom, Geun Young RSC Advances, Vol. 7, Issue 45 https://doi.org/10.1039/C7RA03599C	journal	January 2017
Recent development of two-dimensional transition metal dichalcogenides and their applications Choi, Wonbong; Choudhary, Nitin; Han, Gang Hee Materials Today, Vol. 20, Issue 3 https://doi.org/10.1016/j.mattod.2016.10.002	journal	April 2017
Two-dimensional semiconductors for transistors Chhowalla, Manish; Jena, Debdeep; Zhang, Hua Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.52	journal	August 2016
Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain Xie, Saien; Tu, Lijie; Han, Yimo Science, Vol. 359, Issue 6380 https://doi.org/10.1126/science.aao5360	journal	March 2018
Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material Zhang, Xin; Qiao, Xiao-Fen; Shi, Wei Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C4CS00282B	journal	January 2015
High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion Cai, Qiran; Scullion, Declan; Gan, Wei Science Advances, Vol. 5, Issue 6 https://doi.org/10.1126/sciadv.aav0129	journal	June 2019
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms2018	journal	January 2012
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C. Nano Letters, Vol. 13, Issue 8, p. 3664-3670 https://doi.org/10.1021/nl401544y	journal	July 2013
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Zhou, Wu; Zou, Xiaolong; Najmaei, Sina Nano Letters, Vol. 13, Issue 6, p. 2615-2622 https://doi.org/10.1021/nl4007479	journal	May 2013
Visualization and quantification of transition metal atomic mixing in Mo_1−xW_xS₂ single layers Dumcenco, Dumitru O.; Kobayashi, Haruka; Liu, Zheng Nature Communications, Vol. 4, Article No. 1351 https://doi.org/10.1038/ncomms2351	journal	January 2013
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing Kang, Jun; Tongay, Sefaattin; Li, Jingbo Journal of Applied Physics, Vol. 113, Issue 14, Article No. 143703 https://doi.org/10.1063/1.4799126	journal	April 2013
Ab initio lattice dynamics of diamond Pavone, P.; Karch, K.; Schütt, O. Physical Review B, Vol. 48, Issue 5 https://doi.org/10.1103/PhysRevB.48.3156	journal	August 1993
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Efficient stochastic generation of special quasirandom structures van de Walle, A.; Tiwary, P.; de Jong, M. Calphad, Vol. 42 https://doi.org/10.1016/j.calphad.2013.06.006	journal	September 2013
All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor Das, Saptarshi; Gulotty, Richard; Sumant, Anirudha V. Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl5009037	journal	April 2014
Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method) Gusakova, Julia; Wang, Xingli; Shiau, Li Lynn physica status solidi (a), Vol. 214, Issue 12 https://doi.org/10.1002/pssa.201700218	journal	September 2017
Tuning On–Off Current Ratio and Field-Effect Mobility in a MoS ₂ –Graphene Heterostructure via Schottky Barrier Modulation Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn500676t	journal	May 2014

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