STEM characterization of solar cells

Other · Tue Dec 03 04:00:00 EST 2019 · Advanced Characterization of Thin Film Solar Cells

DOI:https://doi.org/10.1049/PBPO166E_ch11· OSTI ID:1576762

Guo, Jinglong ^[1]; Paulauskas, Tadas ^[2]; Klie, Robert F. ^[3]

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1. Univ. of Illinois at Chicago, Chicago, IL (United States). Dept. of Physics; University of Illinois
2. Univ. of Illinois at Chicago, Chicago, IL (United States). Dept. of Physics; Center for Physics Sciences and Technology, Vilnius (Lithuania)
3. Univ. of Illinois at Chicago, Chicago, IL (United States). Dept. of Physics

Photovoltaic (PV) devices consisting of a thin-film CdTe absorber layer on glass support have long been considered one of the leading technologies for reaching the Department of Energy’s 2030 cost target of less than 0.03/kWh. Here, the currently used device architectures include a thin transparent conductive oxide (TCO) on top of the glass superstrate following by very thin (<100 nm) polycrystalline emitter layer, typically CdS or more recently MgZnO (MZO). The CdTe absorber layer is usually up to 4 µm thick and polycrystalline, followed by the back contact (Figure 1). Typical CdTe thin-film layers are formed from rapid deposition techniques, such as close-spaced sublimation (CSS) or high-rate vapor-transport deposition (HRVDT). Both processes result in a polycrystalline CdTe photo-absorbing film, and such devices can be manufactured cheaply and efficiently at large scale. Record cell efficiencies as high as 22.1% have been demonstrated. However, such cell performances are still far from the theoretical limits (~30% for CdTe), and improvements have mostly been due to better light collection, rather than improvements in absorber conversion efficiency. The remaining obstacles to further improving these devices toward their theoretical limits concern improvements in the fill factor (FF) and, more importantly, open-circuit voltage (V_oc), which is still far from its limit. In fact, it is widely accepted that V_oc is the limiting factor since it reaches only about 60% of the CdTe bandgap. This is in contrast to GaAs solar cells, which have reached a V_oc of 80% of the bandgap. The reasons for this discrepancy have been identified as the low p-type doping concentrations of CdTe due to the formation of compensating defect states, a poor p-n junction, and the need for better backside ohmic contacts. High interfacial defect density at grain boundaries (GBs) and intragrain dislocations is also one of the main concerns because they contribute to the dark current. This is supported by the study of single-crystal-based CdTe solar cells that were able to reach Voc in excess of 1 V.

• Research Organization: Univ. of Illinois, Chicago, IL (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: EE0007545
• OSTI ID: 1576762
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CdTe
STEM