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Low sputtering, cross-field, gas switch and method of operation

Patent ·
OSTI ID:1576399
A gas switch includes a gas-tight housing containing an ionizable gas, an anode disposed within the gas-tight housing, and a cathode disposed within the gas-tight housing, where the cathode includes a conduction surface. The gas switch also includes a control grid positioned between the anode and the cathode, where the control grid is arranged to receive a bias voltage to establish a conducting plasma between the anode and the cathode. In addition, the gas switch includes a plurality of magnets selectively arranged to generate a magnetic field proximate the conduction surface that reduces the kinetic energy of charged particles striking the conduction surface and raises the conduction current density at the cathode surface to technically useful levels.
Research Organization:
General Electric Company, Schenectady, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000298
Assignee:
General Electric Company (Schenectady, NY)
Patent Number(s):
10,403,466
Application Number:
15/933,602
OSTI ID:
1576399
Country of Publication:
United States
Language:
English

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