Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides
A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Number(s):
- 10,400,351
- Application Number:
- 15/697,541
- OSTI ID:
- 1576390
- Resource Relation:
- Patent File Date: 2017 Sep 07
- Country of Publication:
- United States
- Language:
- English
Charged Particle Beam Apparatus and Method for Operating a Charged Particle Beam Apparatus
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patent-application | October 2008 |
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