Surface-induced thickness limit of conducting La-doped SrTiO 3 thin films

Shin, Yeong Jae; Lau, Claudia; Lee, Sangjae; Walker, Frederick J.; Ahn, Charles H.

doi:10.1063/1.5111771

Title: Surface-induced thickness limit of conducting La-doped SrTiO ₃ thin films

Journal Article · Mon Oct 14 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5111771· OSTI ID:1575016

^[1]; Lau, Claudia ^[1]; Lee, Sangjae ^[1]; Walker, Frederick J. ^[1]; Ahn, Charles H. ^[1]

Yale Univ., New Haven, CT (United States)

In this paper, we report on a surface-induced, insulating, electrically dead layer in ultrathin conducting La-doped SrTiO₃thin films. Systematic studies on electrical properties as a function of film thickness and La-doping levels reveal that the insulating layer has a constant thickness and traps a constant amount of electron density regardless of La-doping levels. Growing an additional capping layer on top of the La-doped SrTiO₃ surface counteracts the reduced conductivity, indicating a strong relationship between the insulating layer and the surface structure. Our results emphasize the importance of surface state studies for functional oxides in the thin film limit and provide a guiding principle for the fabrication of La-doped SrTiO₃-based oxide nanoscale devices.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FA9550-15-1-0472; N000144-19-1-2104; AC02-06CH11357

OSTI ID:: 1575016

Alternate ID(s):: OSTI ID: 1607536

Journal Information:: Applied Physics Letters, Vol. 115, Issue 16; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 3 works

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