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Physics of Semiconductor Devices
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book
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January 2007 |
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Nitride-based semiconductors for blue and green light-emitting devices
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journal
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March 1997 |
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Optically Pumped Volume‐Excited cw Room‐Temperature In 1− x Ga x P ( x ≤ 0.60) Platelet Lasers
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journal
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March 1972 |
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Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
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journal
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October 1991 |
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Violet luminescence of Mg‐doped GaN
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journal
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March 1973 |
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
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journal
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March 1995 |
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Organometallic growth and characterization of Ga x In 1− x P ( x =0.51, 0.65, 0.69)
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journal
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August 1986 |
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Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP
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journal
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March 2004 |
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Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
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journal
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February 1990 |
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CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades
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journal
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September 2009 |
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Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
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journal
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July 2008 |
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Ideal efficiency of monolithic, series-connected multijunction solar cells: EFFICIENCY OF MONOLITHIC SOLAR CELLS
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journal
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March 2002 |
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High-Efficiency InGaAlP Visible Light-Emitting Diodes
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journal
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August 1992 |
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Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition
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journal
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March 2009 |
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Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (Al x Ga 1− x ) 0.5 In 0.5 P/GaP light‐emitting diodes
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journal
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May 1994 |
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Band-gap control of GaInP using Sb as a surfactant
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journal
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September 1999 |
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Ordering induced direct-indirect transformation in unstrained GaxIn1−xP for 0.76≤x≤0.78
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journal
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December 2009 |
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Band alignment between GaAs and partially ordered GaInP
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journal
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April 2002 |
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The Physics of Tunable Disorder in Semiconductor Alloys
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book
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January 2002 |
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Research challenges to ultra-efficient inorganic solid-state lighting
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journal
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December 2007 |
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High efficient GaAlAs light‐emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate
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journal
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December 1983 |
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Band parameters for III–V compound semiconductors and their alloys
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journal
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June 2001 |
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EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN‐DOPED GaP p‐n JUNCTIONS
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journal
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August 1968 |
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Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
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journal
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October 1972 |
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History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
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journal
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May 2008 |
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High performance AlGaInP visible light‐emitting diodes
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journal
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December 1990 |
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Minority‐carrier lifetime measurements of efficient GaAlAs p ‐ n heterojunctions
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journal
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August 1977 |
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Properties of Sn‐doped GaAs
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journal
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April 1973 |
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Does In form In-rich clusters in InGaN quantum wells?
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journal
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May 2007 |
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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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journal
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December 1989 |
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Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
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journal
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December 1983 |
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The Blue Laser Diode
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book
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January 2000 |
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EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga 1‐ x Al x As p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
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journal
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August 1967 |
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Polarized band-edge photoluminescence and ordering in Ga 0.52 In 0.48 P
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journal
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November 1989 |
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Al x Ga 1− x As 1− y′ P y′ –GaAs 1− y P y HETEROSTRUCTURE LASER AND LAMP JUNCTIONS
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journal
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November 1970 |
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High-Power GaN P-N Junction Blue-Light-Emitting Diodes
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journal
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December 1991 |
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Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
|
journal
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October 2007 |
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High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
|
journal
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July 2007 |
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40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
|
journal
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September 2008 |
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The Use of Metalorganics in the Preparation of Semiconductor Materials
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journal
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January 1971 |
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Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
|
journal
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August 2003 |
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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journal
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February 1986 |
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Colorimetric and photometric properties of a 2° fundamental observer
|
journal
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October 1978 |
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Liquid Phase Epitaxial Growth of Ga[sub 1−x]Al[sub x]As[sup 1]
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journal
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January 1969 |
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Light-Emitting Diodes
|
book
|
January 2006 |
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Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys
|
journal
|
December 2008 |
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
|
journal
|
September 2006 |
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The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer
|
journal
|
December 1991 |
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Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
|
journal
|
October 1995 |
|
Ordered structure in Ga 0.7 In 0.3 P alloy
|
journal
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August 1989 |
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Thermal Annealing Effects on P-Type Mg-Doped GaN Films
|
journal
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February 1992 |
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Observation of Strong Ordering in Ga x In 1 − x P alloy semiconductors
|
journal
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June 1988 |
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Current Status of GaN-Based Solid-State Lighting
|
journal
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February 2009 |
|
Growth and characterization of Ga 0.65 In 0.35 P orange light‐emitting diodes by metalorganic vapor–phase epitaxy
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journal
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August 1993 |
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Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD Al x Ga 1− x As‐GaAs quantum‐well heterostructures
|
journal
|
October 1978 |
|
Band structure enhancement and optimization of radiative recombination in GaAs 1− x P x :N (and In 1− x Ga x P:N)
|
journal
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October 1974 |
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Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
|
journal
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December 2007 |
|
Auger recombination in InGaN measured by photoluminescence
|
journal
|
October 2007 |
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RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GaP PHOTOLUMINESCENCE
|
journal
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May 1966 |
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High‐efficiency InGaAlP/GaAs visible light‐emitting diodes
|
journal
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March 1991 |
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Single‐Crystal Gallium Arsenide on Insulating Substrates
|
journal
|
February 1968 |
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Solid phase immiscibility in GaInN
|
journal
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October 1996 |
|
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
|
journal
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December 1996 |
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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
|
journal
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February 2002 |
|
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
|
journal
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April 2002 |
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Defect related issues in the “current roll-off” in InGaN based light emitting diodes
|
journal
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October 2007 |