Alignment of morphology during high spatial frequency periodic structure formation in GaAs

Abere, Michael J.; Yalisove, Steven M.; Torralva, Ben

doi:10.1063/1.5114930

Alignment of morphology during high spatial frequency periodic structure formation in GaAs

Journal Article · Wed Oct 09 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5114930· OSTI ID:1574451

Abere, Michael J. ^[1]; Yalisove, Steven M. ^[2]; ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Michigan, Ann Arbor, MI (United States)

The interaction among multiple intense ultrashort laser pulses and solids is known to provide a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and Χ₂, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). The final structures have 180 nm periods, and their alignment perpendicular to the laser polarization is first observed in an intermediate morphology with correlation distances of 150±40 nm. Quantum molecular dynamics simulations suggest that HSFL self-assembly is initiated when the intense laser field softens the interatomic binding potential, which leads to an ultrafast generation of point defects. The morphological evolution begins as self-interstitial diffusion, driven by stress relaxation, to the surface producing 1–2 nm tall islands. An ab initio calculation of excited electron concentration combined with a Drude-Lorentz model of the excited GaAs dielectric function is used to determine that the conditions for SPP coupling at HSFL formation fluences are both satisfied and occur at wavelengths that are imprinted into the observed surface morphologies. The evolution of these morphologies is reported on as the interplay between surface plasmon polaritons that localize defect generation within the structures present on the previous laser exposure and stress relaxation driven defect diffusion.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1574451

Alternate ID(s):: OSTI ID: 1607524
OSTI ID: 1574808

Report Number(s):: SAND--2019-12081J; SAND2019--6560J; 680135

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 126; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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