The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.
Cowen, Benjamin J., et al. "Investigations of irradiation effects in crystalline and amorphous SiC." Journal of Applied Physics, vol. 126, no. 13, Oct. 2019. https://doi.org/10.1063/1.5085216
Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, & Briggs, Samuel A. (2019). Investigations of irradiation effects in crystalline and amorphous SiC. Journal of Applied Physics, 126(13). https://doi.org/10.1063/1.5085216
Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, et al., "Investigations of irradiation effects in crystalline and amorphous SiC," Journal of Applied Physics 126, no. 13 (2019), https://doi.org/10.1063/1.5085216
@article{osti_1574449,
author = {Cowen, Benjamin J. and El-Genk, Mohamed S. and Hattar, Khalid and Briggs, Samuel A.},
title = {Investigations of irradiation effects in crystalline and amorphous SiC},
annote = {The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.},
doi = {10.1063/1.5085216},
url = {https://www.osti.gov/biblio/1574449},
journal = {Journal of Applied Physics},
issn = {ISSN 0021-8979},
number = {13},
volume = {126},
place = {United States},
publisher = {American Institute of Physics (AIP)},
year = {2019},
month = {10}}
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 229, Issue 3-4https://doi.org/10.1016/j.nimb.2004.12.119