Investigations of irradiation effects in crystalline and amorphous SiC
Journal Article
·
· Journal of Applied Physics
- Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Oregon State Univ., Corvallis, OR (United States)
The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525; AC52-06NA25396; AC07-05ID14517
- OSTI ID:
- 1574449
- Report Number(s):
- SAND--2019-12522J; 680418
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 126; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Primary Damage States Produced by Si and Au Recoils in SiC: A Molecular Dynamics and Experimental Investigation
Computer simulation of disordering and amorphization by Si and Au recoils in 3C--SiC
Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC
Journal Article
·
Sun Dec 31 23:00:00 EST 2000
· Physical Review. B, Condensed Matter
·
OSTI ID:15001888
Computer simulation of disordering and amorphization by Si and Au recoils in 3C--SiC
Journal Article
·
Sun Apr 15 00:00:00 EDT 2001
· Journal of Applied Physics
·
OSTI ID:40204939
Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC
Journal Article
·
Sat Jul 07 00:00:00 EDT 2018
· Journal of Nuclear Materials
·
OSTI ID:1609993