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Title: Interface Engineered Room‐Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Journal Article · · Advanced Science
ORCiD logo [1];  [1];  [2];  [3];  [1];  [1];  [4];  [5];  [6];  [7];  [5];  [8];  [9];  [1]
  1. Department of Materials Science and MetallurgyUniversity of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK
  2. Cardiff Catalysis InstituteSchool of ChemistryCardiff University Main Building, Park Place Cardiff CF10 3AT UK
  3. Center for Nanophase Materials SciencesOak Ridge National Laboratory Oak Ridge TN 37831 USA
  4. Sandia National Laboratory Albuquerque NM 87185 USA
  5. School of Materials EngineeringPurdue University West Lafayette IN 47907 USA
  6. Department of Physics and AstronomyWest Virginia University Morgantown WV 26506 USA
  7. Center for Integrated NanotechnologiesLos Alamos National Laboratory Los Alamos NM 87545 USA
  8. Department of PhysicsUniversity of York York YO10 5DD UK, Diamond Light Source Didcot OX11 0DE UK
  9. State Key Laboratory of Physical Chemistry of Solid SurfacesCollege of Chemistry and Chemical EngineeringXiamen University Xiamen 361005 China

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525; 89233218CNA000001; EP/L011700/1; EP/N004272/1; AC04-94AL85000
OSTI ID:
1573844
Alternate ID(s):
OSTI ID: 1573845; OSTI ID: 1623478; OSTI ID: 1648109; OSTI ID: 1778072
Report Number(s):
LA-UR-20-24152; SAND-2021-4224J; 1901606
Journal Information:
Advanced Science, Journal Name: Advanced Science Vol. 7 Journal Issue: 1; ISSN 2198-3844
Publisher:
WileyCopyright Statement
Country of Publication:
Germany
Language:
English
Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science

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