Unexpected Hole Doping of Graphene by Osmium Adatoms

Elias, Jamie A.; Henriksen, Erik A.

doi:10.1002/andp.201900294

Title: Unexpected Hole Doping of Graphene by Osmium Adatoms

Journal Article · Wed Nov 06 00:00:00 EST 2019 · Annalen der Physik (Leipzig)

DOI:https://doi.org/10.1002/andp.201900294· OSTI ID:1573266

Elias, Jamie A. ^[1];

^[2]

Washington University in St. Louis Department of Physics Campus Box 1105, One Brookings Drive St. Louis MO 63130
Washington University in St. Louis Department of Physics Campus Box 1105, One Brookings Drive St. Louis MO 63130, Institute of Materials Science &, Engineering Washington University in St. Louis One Brookings Drive St. Louis MO 63130

Abstract The electronic transport of monolayer graphene devices is studied before and after in situ deposition of a sub‐monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole‐doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge‐doping efficiency. The charge neutrality point of graphene is found to vary non‐monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.

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Sponsoring Organization:: USDOE

OSTI ID:: 1573266

Journal Information:: Annalen der Physik (Leipzig), Journal Name: Annalen der Physik (Leipzig) Vol. 532 Journal Issue: 2; ISSN 0003-3804

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 5 works

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