Transfer of Graphene with Protective Oxide Layers

Grebel, Haim; Stan, Liliana; Sumant, Anirudha; Liu, Yuzi; Gosztola, David; Ocola, Leonidas; Fisher, Brandon

doi:10.3390/chemengineering2040058

Title: Transfer of Graphene with Protective Oxide Layers

Journal Article · Mon Dec 03 00:00:00 EST 2018 · ChemEngineering

DOI:https://doi.org/10.3390/chemengineering2040058· OSTI ID:1572724

Grebel, Haim ^[1]; Stan, Liliana ^[2]; Sumant, Anirudha ^[2]; Liu, Yuzi ^[2];

^[2]; Ocola, Leonidas ^[2]; Fisher, Brandon ^[2]

New Jersey Inst. of Technology (NJIT), Newark, NJ (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1572724

Journal Information:: ChemEngineering, Vol. 2, Issue 4; ISSN 2305-7084

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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