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Transfer of Graphene with Protective Oxide Layers

Journal Article · · ChemEngineering

Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1572724
Journal Information:
ChemEngineering, Journal Name: ChemEngineering Journal Issue: 4 Vol. 2; ISSN 2305-7084
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English

References (35)

Progress and Challenges in Transfer of Large-Area Graphene Films journal February 2016
Kinetic theory of two-component (“hetero-molecular”) nucleation and condensation journal July 1976
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates journal June 2002
Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films journal February 2016
Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area journal October 2014
Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects journal July 2007
Graphene Strained by Defects journal April 2017
Improvement of Al 2 O 3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H 2 O Treatment journal May 2014
Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene journal July 2008
Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors journal December 2009
Wafer-Scale Synthesis and Transfer of Graphene Films journal February 2010
Structural Defects in Graphene journal November 2010
Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates journal August 2011
Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum journal January 2012
Current saturation in zero-bandgap, top-gated graphene field-effect transistors journal September 2008
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor journal March 2008
Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing journal August 2012
Automatic graphene transfer system for improved material quality and efficiency journal February 2016
PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method journal September 2016
A sustainable approach to large area transfer of graphene and recycling of the copper substrate journal January 2017
Two-component heterogeneous nucleation kinetics and an application to Mars journal October 2007
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics journal May 2008
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric journal February 2009
Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices journal July 2010
Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition journal April 2012
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends journal January 2013
Clean transfer of graphene and its effect on contact resistance journal September 2013
Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer journal November 2017
Simple method to transfer graphene from metallic catalytic substrates to flexible surfaces without chemical etching journal April 2013
The role of interlayer adhesion in graphene oxide upon its reinforcement of nanocomposites
  • Li, Zheling; Kinloch, Ian A.; Young, Robert J.
  • Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 374, Issue 2071 https://doi.org/10.1098/rsta.2015.0283
journal July 2016
Deposition of High-Quality HfO 2 on Graphene and the Effect of Remote Oxide Phonon Scattering journal September 2010
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates journal June 2009
Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer text January 2017
Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O journal January 2011
The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering text January 2009

Cited By (1)

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics journal September 2019

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