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Influence of surface preparation on device properties in GaN power electronics with MgO gate dielectic.

Conference ·
OSTI ID:1570181
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1570181
Report Number(s):
SAND2018-7561C; 665750
Country of Publication:
United States
Language:
English

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