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Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure

Journal Article · · New Journal of Physics
The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the x-ray absorption spectroscopy at Ni L 2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
Chinese Academy of Sciences (CAS); Gordon and Betty Moore Foundation; National Natural Science Foundation of China (NNSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-05CH11231; AC02-06CH11357; SC0012375
OSTI ID:
1569088
Alternate ID(s):
OSTI ID: 1609143
OSTI ID: 1599811
OSTI ID: 22990826
Journal Information:
New Journal of Physics, Journal Name: New Journal of Physics Journal Issue: 10 Vol. 21; ISSN 1367-2630
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United Kingdom
Language:
English

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