Solvent-free synthesis of organometallic halides CH3NH3PbI3 and (CH3NH3)3Bi2I9 and their thermoelectric transport properties

Long, Xiang; Pan, Zhenyu; Zhang, Zhuolei; Urban, Jeffrey J.; Wang, Heng

doi:10.1063/1.5113535

Solvent-free synthesis of organometallic halides CH₃NH₃PbI₃ and (CH₃NH₃)₃Bi₂I₉ and their thermoelectric transport properties

Journal Article · Tue Aug 13 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5113535· OSTI ID:1567169

Long, Xiang ^[1]; Pan, Zhenyu ^[1]; Zhang, Zhuolei ^[2]; ^[2]; ^[1]

Illinois Inst. of Technology, Chicago, IL (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry

Organometallic halides are great candidates for optoelectronics. As an important family of semiconductors, understanding their thermoelectric transport properties is also important. This has been a challenging task as many of such compounds are highly intrinsic. In this work, we synthesized two halides, CH₃NH₃PbI₃ and (CH₃NH₃)₃Bi₂I₉, using a solvent-free method. We found an extraordinarily high Seebeck coefficient of +2600 ± 200 μV/K in (CH₃NH₃)₃Bi₂I₉. For CH₃NH₃PbI₃, our synthesis method led to a negative Seebeck coefficient of –1350 ± 50 μV/K, in contrast to positive values observed in solvent synthesized samples. We also found the thermal conductivity of CH₃NH₃PbI₃ to be 0.38 W/m K, largely independent of temperature from 300 K to 450 K, despite a tetragonal-to-cubic phase transition. (CH₃NH₃)₃Bi₂I₉ has an even lower thermal conductivity of 0.21 W/m K (also temperature independent) which is due to its soft phonon dispersion and weak bonds.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1567169

Alternate ID(s):: OSTI ID: 1557028

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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