Embedded boron nitride domains in graphene nanoribbons for transport gap engineering

Lopez-Bezanilla, Alejandro; Roche, Stephan

doi:10.1103/physrevb.86.165420

Title: Embedded boron nitride domains in graphene nanoribbons for transport gap engineering

Journal Article · Thu Oct 11 00:00:00 EDT 2012 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/physrevb.86.165420· OSTI ID:1565039

Lopez-Bezanilla, Alejandro ^[1]; Roche, Stephan ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. Autónoma de Barcelona, Barcelona (Spain). Catalan Inst. of Nanotechnology (CIN2); Inst. Catalana de Recerca i Estudis Avancats, Barcelona (Spain)

In this study, we numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to be highly dependent on both the BN-domain shape and the size with a strong tendency toward an insulating regime when increasing the number of ionic bonds in the ribbon. This versatility of conduction properties offers remarkable opportunities for transport gap engineering for the design of complex device architectures based on a newly synthesized one-atom hybrid layered material.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1565039

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 86, Issue 16; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Defective graphene domains in boron nitride sheets dos Santos, Ramiro Marcelo; Santos, Renato Batista; Neto, Bernahrd Georg Enders Journal of Molecular Modeling, Vol. 25, Issue 8 https://doi.org/10.1007/s00894-019-4093-5	journal	July 2019
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Ab initio spin-flip conductance of hydrogenated graphene nanoribbons: Spin-orbit interaction and scattering with local impurity spins Wilhelm, Jan; Walz, Michael; Evers, Ferdinand Physical Review B, Vol. 92, Issue 1 https://doi.org/10.1103/physrevb.92.014405	journal	July 2015
Ab initio spin-flip conductance of hydrogenated graphene nanoribbons: spin- orbit interaction and scattering with local impurity sites Wilhelm, J.; Walz, M.; Evers, F. Universität Regensburg https://doi.org/10.5283/epub.33560	text	January 2015
Resonant tunnelling and negative differential conductance in graphene transistors Britnell, L.; Gorbachev, R. V.; Geim, A. K. arXiv https://doi.org/10.48550/arxiv.1303.6864	text	January 2013
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