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Simple correction to bandgap problems in IV and III–V semiconductors: an improved, local first-principles density functional theory

Journal Article · · Journal of Physics. Condensed Matter
 [1];  [2];  [3];  [4];  [5];  [2];  [6]
  1. Univ. of Calcutta, Kolkata (India); Lady Brabourne College, Kolkata (India)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  3. Lady Brabourne College, Kolkata (India)
  4. Univ. of Calcutta, Kolkata (India)
  5. Indian Inst. of Technology, Kanpur (India)
  6. Lady Brabourne College, Kolkata (India); S. N. Bose National Centre for Basic Sciences, Kolkata (India)
We report results from a fast, efficient, and first-principles full-potential Nth-order muffin-tin orbital (FP-NMTO) method combined with van Leeuwen–Baerends correction to local density exchange-correlation potential. We show that more complete and compact basis set is critical in improving the electronic and structural properties. Here, we exemplify the self-consistent FP-NMTO calculations on group IV and III–V semiconductors. Notably, predicted bandgaps, lattice constants, and bulk moduli are in good agreement with experiments (e.g. we find for Ge 0.86 eV, 5.57 Å, 75 GPa versus measured 0.74 eV, 5.66 Å, 77.2 GPa). Here, we also showcase its application to the electronic properties of 2-dimensional h-BN and h-SiC, again finding good agreement with experiments.
Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1564089
Alternate ID(s):
OSTI ID: 23006696
Report Number(s):
IS-J--9981
Journal Information:
Journal of Physics. Condensed Matter, Journal Name: Journal of Physics. Condensed Matter Journal Issue: 49 Vol. 31; ISSN 0953-8984
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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