Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Småbråten, Didrik R.; Meier, Quintin N.; Skjærvø, Sandra H.; Inzani, Katherine; Meier, Dennis; Selbach, Sverre M.

doi:10.1103/physrevmaterials.2.114405

Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Journal Article · Wed Nov 14 00:00:00 EST 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.2.114405· OSTI ID:1563981

Småbråten, Didrik R. ^[1]; Meier, Quintin N. ^[2]; Skjærvø, Sandra H. ^[1]; Inzani, Katherine ^[1]; Meier, Dennis ^[1]; Selbach, Sverre M. ^[1]

Univ. of Science and Technology, Trondheim (Norway)
ETH Zurich, Zurich (Switzerland)

Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes, and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO₃, InMnO₃, and YGaO₃ by first-principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization, reflecting that polarization is not the driving force for domain formation. We introduce general rules for how to engineer n- and p-type domain wall conductivity based on the domain size, polarization, and electronic band gap. Furthermore, this opens the possibility of fine tuning the local transport properties and designing p-n-junctions for domain wall-based nanocircuitry.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1563981

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 11 Vol. 2; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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IR-range photoinduced diode effect in the manganese-substituted bismuth ferrite films Aplesnin, S. S.; Kretinin, V. V.; Masyugin, A. N. Semiconductor Science and Technology, Vol. 34, Issue 9 https://doi.org/10.1088/1361-6641/ab3160	journal	July 2019
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A dynamical magnetic field accompanying the motion of ferroelectric domain walls Juraschek, Dominik M.; Meier, Quintin N.; Trassin, Morgan arXiv https://doi.org/10.48550/arxiv.1904.06335	text	January 2019

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