Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3

Swallow, Jack E. N.; Williamson, Benjamin A. D.; Sathasivam, Sanjayan; Birkett, Max; Featherstone, Thomas J.; Murgatroyd, Philip A. E.; Edwards, Holly J.; Lebens-Higgins, Zachary W.; Duncan, David A.; Farnworth, Mark; Warren, Paul; Peng, Nianhua; Lee, Tien-Lin; Piper, Louis F. J.; Regoutz, Anna; Carmalt, Claire J.; Parkin, Ivan P.; Dhanak, Vin R.; Scanlon, David O.; Veal, Tim D.

doi:10.1039/C9MH01014A

Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In ₂ O ₃

Journal Article · Thu Jan 02 00:00:00 EST 2020 · Materials Horizons

DOI:https://doi.org/10.1039/C9MH01014A· OSTI ID:1562327

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^[1]; Featherstone, Thomas J. ^[1]; Murgatroyd, Philip A. E. ^[1]; Edwards, Holly J. ^[1];

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^[5]; Farnworth, Mark ^[6]; Warren, Paul ^[6]; Peng, Nianhua ^[7]; Lee, Tien-Lin ^[5];

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^[3]; Dhanak, Vin R. ^[1];

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Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
Department of Chemistry, University College London, London, WC1H 0AJ, UK
Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
Surrey Ion Beam Centre, University of Surrey, Surrey, UK

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 1562327

Journal Information:: Materials Horizons, Journal Name: Materials Horizons Vol. 7 Journal Issue: 1; ISSN 2051-6347

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 41 works

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References (37)

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Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In ₂ O ₃