Putative hybridization gap in CaMn2Bi2 under applied pressure

Moda Piva, Mario; Thomas, Sean Michael; Fisk, Zachary; Zhu, J. -X.; Thompson, Joe David; Pagliuso, P. G.; Ferrari Silveira Rosa, Priscila

doi:10.1103/PhysRevB.100.045108

Putative hybridization gap in ${CaMn}_{2} {Bi}_{2}$ under applied pressure

Journal Article · Mon Jul 08 00:00:00 EDT 2019 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.100.045108· OSTI ID:1561083

^[1]; ^[2]; Fisk, Zachary ^[3]; Zhu, J. -X. ^[2]; ^[2]; Pagliuso, P. G. ^[4]; ^[2]

Univ. of Campinas (UNICAMP), Sao Paulo (Brazil); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of California, Irvine, CA (United States)
Univ. of Campinas (UNICAMP), Sao Paulo (Brazil)

Here, we study electrical transport measurements on

{CaMn}_{2} {Bi}_{2}

single crystals under applied pressure. At ambient pressure and high temperatures,

{CaMn}_{2} {Bi}_{2}

behaves as a single-band semimetal hosting Néel order at T_N = 150 K. At low temperatures, multiband behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be Δ~ 20 K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2) K/kbar, but it also enhances the activation gap at 20 kbar by about 70%. This gap enhancement is usual of correlated narrow-gap semiconductors such as FeSi and Ce₃Bi₄Pt₃, and it places

{CaMn}_{2} {Bi}_{2}

as a Mn-based hybridization-gap semiconductor candidate. Ab initio calculations based on density functional theory are demonstrated to be insufficient to describe the ground state of

{CaMn}_{2} {Bi}_{2}

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1561083

Alternate ID(s):: OSTI ID: 1546428

Report Number(s):: LA-UR--19-28476

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 4 Vol. 100; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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