Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells

Park, Helen Hejin; Heasley, Rachel; Sun, Leizhi; Steinmann, Vera; Jaramillo, Rafael; Hartman, Katy; Chakraborty, Rupak; Sinsermsuksakul, Prasert; Chua, Danny; Buonassisi, Tonio; Gordon, Roy G.

doi:10.1002/pip.2504

Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells

Journal Article · Mon May 05 00:00:00 EDT 2014 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.2504· OSTI ID:1557830

Park, Helen Hejin ^[1]; Heasley, Rachel ^[2]; Sun, Leizhi ^[2]; Steinmann, Vera ^[3]; Jaramillo, Rafael ^[3]; Hartman, Katy ^[3]; Chakraborty, Rupak ^[3]; Sinsermsuksakul, Prasert ^[2]; Chua, Danny ^[2]; Buonassisi, Tonio ^[3]; Gordon, Roy G. ^[2]

Harvard Univ., Cambridge, MA (United States); Office of Scientific and Technical Information (OSTI)
Harvard Univ., Cambridge, MA (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Thin-film solar cells consisting of earth-abundant and non-toxic materials were created from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were investigated for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: EE0005329

OSTI ID:: 1557830

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 7 Vol. 23; ISSN 1062-7995

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
SnS thin‐film solar cell
atomic layer deposition
buffer layer
pulsed‐chemical vapor deposition
zinc oxysulfide

Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells

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