Antimony-Doped Tin(II) Sulfide Thin Films

Sinsermsuksakul, Prasert; Chakraborty, Rupak; Kim, Sang Bok; Heald, Steven M.; Buonassisi, Tonio; Gordon, Roy G.

doi:10.1021/cm3024988

Antimony-Doped Tin(II) Sulfide Thin Films

Journal Article · Thu Nov 15 00:00:00 EST 2012 · Chemistry of Materials

DOI:https://doi.org/10.1021/cm3024988· OSTI ID:1557783

Sinsermsuksakul, Prasert ^[1]; Chakraborty, Rupak ^[2]; Kim, Sang Bok ^[3]; Heald, Steven M. ^[4]; Buonassisi, Tonio ^[2]; Gordon, Roy G. ^[3]

Harvard Univ., Cambridge, MA (United States); Office of Scientific and Technical Information (OSTI)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Harvard Univ., Cambridge, MA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements.(1) Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. In this paper, we report doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (~1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (~5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Lastly, extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC02-06CH11357; EE0005329

OSTI ID:: 1557783

Journal Information:: Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 23 Vol. 24; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications Hu, Ziyu; Ding, Yingchun; Hu, Xuemin Nanotechnology, Vol. 30, Issue 25 https://doi.org/10.1088/1361-6528/ab07d9	journal	April 2019
Study of ac and dc electrical resistivity variation with high pressure of as-grown pure, indium and antimony doped SnS single crystals Chaudhary, Mahesh D.; Chaki, Sunil H.; Deshpande, M. P. Physica Scripta, Vol. 94, Issue 10 https://doi.org/10.1088/1402-4896/ab30cd	journal	August 2019
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First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS Guo, Ruiqiang; Wang, Xinjiang; Kuang, Youdi Physical Review B, Vol. 92, Issue 11 https://doi.org/10.1103/physrevb.92.115202	journal	September 2015
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS Guo, Ruiqiang; Wang, Xinjiang; Kuang, Youdi arXiv https://doi.org/10.48550/arxiv.1505.02601	text	January 2015

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Antimony-Doped Tin(II) Sulfide Thin Films

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