Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Qian, Xiaofeng; Liu, Junwei; Fu, Liang; Li, Ju

doi:10.1126/science.1256815

Title: Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Journal Article · Fri Dec 12 00:00:00 EST 2014 · Science

DOI:https://doi.org/10.1126/science.1256815· OSTI ID:1557594

Qian, Xiaofeng ^[1]; Liu, Junwei ^[1]; Fu, Liang ^[1]; Li, Ju ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX₂ with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX₂ and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0010526

OSTI ID:: 1557594

Journal Information:: Science, Vol. 346, Issue 6215; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1397 works

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