Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Chakraborty, R.; Steinmann, V.; Mangan, N. M.; Brandt, R. E.; Poindexter, J. R.; Jaramillo, R.; Mailoa, J. P.; Hartman, K.; Polizzotti, A.; Yang, C.; Gordon, R. G.; Buonassisi, T.

doi:10.1063/1.4921326

Title: Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Journal Article · Mon May 18 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921326· OSTI ID:1547010

^[1]; Steinmann, V. ^[1]; Mangan, N. M. ^[1]; Brandt, R. E. ^[1]; Poindexter, J. R. ^[1]; Jaramillo, R. ^[1];

^[1]; Hartman, K. ^[1]; Polizzotti, A. ^[1]; Yang, C. ^[2]; Gordon, R. G. ^[2]; Buonassisi, T. ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Harvard Univ., Cambridge, MA (United States)

We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. Yet, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results reflect a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings demonstrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; National Science Foundation (NSF)

Grant/Contract Number:: EE0005329

OSTI ID:: 1547010

Alternate ID(s):: OSTI ID: 1226742

Journal Information:: Applied Physics Letters, Vol. 106, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material Jaramillo, R.; Sher, Meng-Ju; Ofori-Okai, Benjamin K. Journal of Applied Physics, Vol. 119, Issue 3 https://doi.org/10.1063/1.4940157	journal	January 2016
The impact of sodium contamination in tin sulfide thin-film solar cells Steinmann, Vera; Brandt, Riley E.; Chakraborty, Rupak APL Materials, Vol. 4, Issue 2 https://doi.org/10.1063/1.4941713	journal	February 2016
Influences of vacancy and doping on electronic and magnetic properties of monolayer SnS Ullah, Hamid; Noor-A-Alam, Mohammad; Kim, Hye Jung Journal of Applied Physics, Vol. 124, Issue 6 https://doi.org/10.1063/1.5022151	journal	August 2018

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