Electrochemical Methoxylation of an HF-Etched Porous Silicon Surface

Journal Article · Sun Mar 01 04:00:00 EST 1998 · Journal of Physical Chemistry B

DOI:https://doi.org/10.1021/jp980140j· OSTI ID:1545039

Gole, James L. ^[1]; Dixon, David A. ^[2]

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1. Georgia Institute Of Technology
2. BATTELLE (PACIFIC NW LAB)

The electrochemical methoxylation of a porous silicon (PS) surface using an anhydrous methanol etch and the resulting modification of the photoluminescent emission (PL) from the surface are evaluated within the framework of the silanone-based silicon oxyhydride fluorophors and their methylated counterparts. The molecular electronic structure of the ground-state singlet and low-lying triplet electronic states of some 20 oxyhydrides of the form OSi(R)2, OSi(R)OR, and OSi(OR)2, where R = H, CH3, or SiH3, is considered. The predicted electronic transitions correlate well with the experimentally observed PL for PS and its methoxylated counterpart. The substitution of a methyl (CH3) group for a silyl (SiH3) unit is predicted to produce the observed PL blue shift accompanied by an increased PL intensity and stability.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1545039
• Report Number(s): PNNL-SA-29679
• Journal Information: Journal of Physical Chemistry B, Journal Name: Journal of Physical Chemistry B Journal Issue: 10 Vol. 102
• Country of Publication: United States
• Language: English