IRPS Increases its Coverage of SiC and GaN

Journal Article · Mon Jul 01 00:00:00 EDT 2019 · Compound Semiconductor

OSTI ID:1544809

Kaplar, Robert ^[1]; Meneghini, Matteo ^[2]; Lelis, Aivars ^[3]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Univ. of Padova (Italy)
3. U.S. Army Research Lab, Adelphi, MD (United States)

Over the past few years, interest has rocketed in the use of wide bandgap devices for energy-efficiency applications such as the electric grid, vehicle electrification, and more-electric aircraft. Deployed in these situations, devices must have a high reliability. In fact, this attribute is so crucial that it is a primary gatingfactor, determining the rate at which these wide bandgap devices are being inserted into these system applications.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1544809
• Report Number(s): SAND--2019-7771J; 677187
• Journal Information: Compound Semiconductor, Journal Name: Compound Semiconductor Journal Issue: 4 Vol. 25; ISSN 1096-598X
• Publisher: Angel Business Communications
• Country of Publication: United States
• Language: English

Related Subjects

29 ENERGY PLANNING, POLICY, AND ECONOMY
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION