Effect of interatomic potential on the energetics of hydrogen and helium-vacancy complexes in bulk, or near surfaces of tungsten
Journal Article
·
· Journal of Nuclear Materials
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Hydrogen (H) trapping by helium-vacancy (He$$-$$V) complexes in bulk and the near surface region of tungsten (W) have been investigated by molecular statics calculations that evaluate two different W$$-$$H interatomic potentials, which use the same W$$-$$He, He$$-$$He and He$$-$$H potentials. One of the W$$-$$H potentials is a bond-order potential (BOP) developed by Juslin et al., while the other is an embedding atom method (EAM) potential developed by Wang et al. Both potentials overestimate the H binding energies to He clusters in bulk W, as compared to DFT calculations, but properly predict the functional form of the H binding energies to He clusters with increasing number of He and H. The BOP simulations reveal that H binding energies to HexV complexes generally increase with increasing number of He. However, the EAM results indicate that the H binding energy as a function of number of He depends on the number of H, and the H binding energies change slightly at high He content. Compared with available DFT data, both BOP and EAM underestimate the H binding energies to HexV2Hm complexes. Here, the BOP reproduces the He formation energy below a W surface, while the EAM potential better reproduces the H formation energy and the interactions between H and He$$-$$V complexes. Based on these comparisons, we determine that the EAM potential is more accurate than BOP for large-scale molecular dynamics simulations of W$$-$$He$$-$$H interactions. The EAM potential predicts that the difference in the average binding energies of H to stable He$$-$$V complexes near the W surface is less than 0.2 eV and the difference decreases with increasing He content. Thus, the EAM potential indicates that the effect of surfaces on H binding energies to large He$$-$$V complexes below the W surfaces can be ignored.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); UT-Battelle LLC/ORNL, Oak Ridge, TN (Unted States); Univ. of Tennessee, Knoxville, TN (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR). Scientific Discovery through Advanced Computing (SciDAC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Office of Science (SC), Fusion Energy Sciences (FES)
- Grant/Contract Number:
- AC05-00OR22725; SC0006661
- OSTI ID:
- 1543568
- Alternate ID(s):
- OSTI ID: 1636040
OSTI ID: 22886939
- Journal Information:
- Journal of Nuclear Materials, Journal Name: Journal of Nuclear Materials Journal Issue: C Vol. 512; ISSN 0022-3115
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English