Nonlinear Planar Hall Effect

He, Pan; Zhang, Steven S. -L.; Zhu, Dapeng; Shi, Shuyuan; Heinonen, Olle G.; Vignale, Giovanni; Yang, Hyunsoo

doi:10.1103/PhysRevLett.123.016801

Nonlinear Planar Hall Effect

Journal Article · Mon Jul 01 00:00:00 EDT 2019 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.123.016801· OSTI ID:1543281

He, Pan ^[1]; Zhang, Steven S. -L. ^[2]; Zhu, Dapeng ^[1]; Shi, Shuyuan ^[1]; Heinonen, Olle G. ^[3]; Vignale, Giovanni ^[4]; Yang, Hyunsoo ^[1]

National Univ. of Singapore (Singapore). Dept. of Electrical and Computer Engineering, and National Univ. of Singapore Nanoscience & Nanotechnology Initiative (NUSNNI)
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $$\mathrm{Bi_2Se_3}$$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $$\pi/2$$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $$\pi/4$$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1543281

Alternate ID(s):: OSTI ID: 1546420

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 1 Vol. 123; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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