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Title: Nonlinear Planar Hall Effect

Abstract

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a pi/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of pi/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
OSTI Identifier:
1543281
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 123; Journal Issue: 1
Country of Publication:
United States
Language:
English

Citation Formats

He, Pan, Zhang, Steven S.-L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S.-L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, & Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S.-L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Mon . "Nonlinear Planar Hall Effect". United States. doi:10.1103/PhysRevLett.123.016801.
@article{osti_1543281,
title = {Nonlinear Planar Hall Effect},
author = {He, Pan and Zhang, Steven S.-L. and Zhu, Dapeng and Shi, Shuyuan and Heinonen, Olle G. and Vignale, Giovanni and Yang, Hyunsoo},
abstractNote = {An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a pi/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of pi/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.},
doi = {10.1103/PhysRevLett.123.016801},
journal = {Physical Review Letters},
number = 1,
volume = 123,
place = {United States},
year = {2019},
month = {7}
}