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Title: Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy

Journal Article · · Journal of Materials Research
DOI:https://doi.org/10.1557/jmr.2018.14· OSTI ID:1541930

Abstract

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0006335
OSTI ID:
1541930
Journal Information:
Journal of Materials Research, Vol. 33, Issue 4; ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English

References (29)

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Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates journal April 1998
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journal November 2015
A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells journal January 2014
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Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26% journal March 2017
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Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell
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conference June 2014
Charge Carrier Separation in Solar Cells journal January 2015
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Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth journal August 2016
Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy journal October 2017
Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer journal May 2005

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