Growth of high-quality Bi 2 Se 3 topological insulators using (Bi 1-x In x ) 2 Se 3 buffer layers
Journal Article
·
· Journal of Vacuum Science and Technology B
- Department of Materials Science and Engineering, University of Delaware, 127 The Green, Room 201, Newark Delaware 19716
Not provided.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0016380; SC0017801
- OSTI ID:
- 1541665
- Journal Information:
- Journal of Vacuum Science and Technology B, Vol. 36, Issue 2; ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIP
- Country of Publication:
- United States
- Language:
- English
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journal | March 2018 |
| Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films | preprint | January 2020 |
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