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Title: Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus

Journal Article · · Physical Review B
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Not provided.

Research Organization:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0002623
OSTI ID:
1540718
Journal Information:
Physical Review B, Vol. 96, Issue 15; ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

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