Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5026630· OSTI ID:1540195
 [1];  [2];  [3];  [4];  [5]
  1. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS); DOE/OSTI
  2. Univ. Autónoma de Madrid, Madrid (Spain). Dept. de Física de la Materia Condensada
  3. Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
  4. Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology
  5. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
+ Show Author Affiliations
High quality, epitaxial thin-films are key components of almost all modern electronic devices. During deposition, lattice mismatch between the substrate and the film generates elastic strain. The strain energy grows with film thickness until a defect is generated that relieves the strain. The strain relaxation mechanism is critical in epitaxial electrodeposition. Here, we study how a metal (bismuth) film growing via electrodeposition on a semiconductor substrate [GaAs(110)] relaxes the lattice mismatch-induced strain. Using in situ synchrotron-based X-ray techniques, we monitor the crystallographic orientation and grain size of the growing film during electrochemical deposition. We (1) confirm that a single crystallographic orientation of the film, with ($$01\bar{1}8$$) as the oriented plane, can be selected by controlling the overpotential, η, and (2) find that, after a threshold thickness is reached, the tilt angle varies monotonically with film thickness. Our data are consistent with the film relaxing the strain by forming low-energy, asymmetric tilt boundaries.
Research Organization:
Cornell Univ., Ithaca, NY (United States); Energy Frontier Research Centers (EFRC) (United States). Energy Materials Center at Cornell (EMC2)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC)
Grant/Contract Number:
SC0001086
OSTI ID:
1540195
Alternate ID(s):
OSTI ID: 1460499
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 124; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (26)

Synthesis of bismuth with various morphologies by electrodeposition journal June 2003
Electrodeposition of bismuth from nitric acid electrolyte journal June 2007
Electrodeposition of bismuth onto glassy carbon electrodes from nitrate solutions journal September 2005
Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition journal May 2012
Interface defects, reference spaces and the Frank–Bilby equation journal June 2013
Structure of the Photo-catalytically Active Surface of SrTiO 3 journal June 2016
Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials journal December 2013
X-ray microdiffraction study of growth modes and crystallographic tilts in oxide films on metal substrates journal June 2003
Tilt boundary induced heteroepitaxy in chemically grown dendritic silver nanostructures on germanium and their optical properties journal January 2014
Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate journal July 2001
Structure of vapor‐deposited Ga x In 1− x As crystals journal September 1974
Electrodeposition of bismuth thin films on n-GaAs (110) journal March 2005
Epitaxial Bi∕GaAs(111) diodes via electrodeposition journal January 2006
Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping journal March 2007
Surface morphology and structure of epitaxial yttrium on niobium buffer layers with different orientations journal May 2000
Asymmetric coherent tilt boundaries formed by molecular beam epitaxy journal February 1990
Dislocation Models of Crystal Grain Boundaries journal May 1950
Slip requirements for coherent tilt of hcp epitaxial crystals journal August 1991
Early stages of YBa 2 Cu 3 O 7 − δ epitaxial growth on MgO and SrTiO 3 journal April 1992
Quantum size effects in a one-dimensional semimetal journal November 2006
Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion journal January 2013
Many-Body Surface Strain and Surface Reconstructions in fcc Transition Metals journal May 1988
Nucleation processes in the growth of hcp titanium journal January 1991
Large Magnetoresistance and Finite-Size Effects in Electrodeposited Single-Crystal Bi Thin Films journal April 1999
High-Energy Surface X-ray Diffraction for Fast Surface Structure Determination journal January 2014
Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2 journal January 1997

Cited By (1)

Underpotential‐Assisted Electrodeposition of Highly Crystalline and Smooth Thin Film of Bismuth journal December 2019

Similar Records

Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
Journal Article · Sat Dec 31 23:00:00 EST 2005 · Journal of Applied Physics · OSTI ID:1003316
Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
Journal Article · Fri Sep 01 00:00:00 EDT 2006 · Journal of Applied Physics · OSTI ID:20884676

Related Subjects

36 MATERIALS SCIENCE
Physics