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Title: Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure

Abstract

Not provided.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4]
  1. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States
  2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
  3. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, United States
  4. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree); Carnegie Inst. of Washington, Washington, DC (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1538988
DOE Contract Number:  
SC0001057
Resource Type:
Journal Article
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 2; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Materials Science

Citation Formats

Gao, Guoying, Liang, Xiaowei, Ashcroft, N. W., and Hoffmann, Roald. Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure. United States: N. p., 2018. Web. doi:10.1021/acs.chemmater.7b04243.
Gao, Guoying, Liang, Xiaowei, Ashcroft, N. W., & Hoffmann, Roald. Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure. United States. doi:10.1021/acs.chemmater.7b04243.
Gao, Guoying, Liang, Xiaowei, Ashcroft, N. W., and Hoffmann, Roald. Wed . "Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure". United States. doi:10.1021/acs.chemmater.7b04243.
@article{osti_1538988,
title = {Potential Semiconducting and Superconducting Metastable Si 3 C Structures under Pressure},
author = {Gao, Guoying and Liang, Xiaowei and Ashcroft, N. W. and Hoffmann, Roald},
abstractNote = {Not provided.},
doi = {10.1021/acs.chemmater.7b04243},
journal = {Chemistry of Materials},
issn = {0897-4756},
number = 2,
volume = 30,
place = {United States},
year = {2018},
month = {1}
}