Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049 China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083 China
Not provided.
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- FG02-07ER46394
- OSTI ID:
- 1537370
- Journal Information:
- Advanced Materials, Vol. 30, Issue 9; ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
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