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Title: Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy

Journal Article · · Advanced Materials
 [1];  [2];  [3];  [2];  [2];  [2];  [2]; ORCiD logo [4]
  1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 China
  2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA
  3. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049 China
  4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083 China

Not provided.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
FG02-07ER46394
OSTI ID:
1537370
Journal Information:
Advanced Materials, Vol. 30, Issue 9; ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English

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