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Title: Valley-dependent magnetoresistance in two-dimensional semiconductors

Journal Article · · Physical Review B

Not provided.

Research Organization:
Univ. of Texas, Austin, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
FG02-02ER45958; FG03-02ER45958
OSTI ID:
1537284
Journal Information:
Physical Review B, Vol. 97, Issue 20; ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

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Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires journal December 2015
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Negative magnetoresistance in Dirac semimetal Cd3As2 journal January 2016
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Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP journal May 2016
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The valley Hall effect in MoS2 transistors journal June 2014
Interband coherence response to electric fields in crystals: Berry-phase contributions and disorder effects journal July 2017
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Vertex Corrections to the Anomalous Hall Effect in Spin-Polarized Two-Dimensional Electron Gases with a Rashba Spin-Orbit Interaction journal July 2006
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Valley-selective circular dichroism of monolayer molybdenum disulphide journal January 2012
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