Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers

Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E.; Hankiewicz, Ewelina M.; Žutić, Igor

doi:10.1103/physrevlett.117.166806

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers

Journal Article · Fri Oct 14 00:00:00 EDT 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.117.166806· OSTI ID:1536437

Scharf, Benedikt ^[1]; Matos-Abiague, Alex ^[2]; Han, Jong E. ^[2]; Hankiewicz, Ewelina M. ^[3]; Žutić, Igor ^[2]

Univ. at Buffalo, NY (United States). Dept. of Physics; DOE/OSTI
Univ. at Buffalo, NY (United States). Dept. of Physics
Univ. of Würzburg (Germany). Inst. for Theoretical Physics and Astrophysics

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator–ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

View Accepted Manuscript (DOE)

Research Organization:: Univ. at Buffalo, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0004890

OSTI ID:: 1536437

Alternate ID(s):: OSTI ID: 1328959

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 117; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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