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Title: Transport in ferromagnet/superconductor spin valves

Journal Article · · Physical Review B
 [1];  [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)

We consider charge transport properties in realistic, fabricable, ferromagnet/superconductor spin valves having a layered structure F1/N/F2/S, where F1 and F2 denote the ferromagnets, S the superconductor, and N the normal-metal spacer usually inserted in actual devices. Our calculation is fully self-consistent, as required to ensure that conservation laws are satisfied. We include the effects of scattering at all the interfaces. We obtain results for the device conductance G, as a function of bias voltage, for all values of the angle Φ between the magnetizations of the F1 and F2 layers and a range of realistic values for the material and geometrical parameters in the sample. We discuss, in the context of our results for G, the relative influence of all parameters on the spin valve properties. We also study the spin current and the corresponding spin-transfer torque in F1/F2/S structures.

Research Organization:
Univ. of California, Irvine, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0014467
OSTI ID:
1535848
Alternate ID(s):
OSTI ID: 1343334
Journal Information:
Physical Review B, Vol. 95, Issue 5; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

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Cited By (4)

Superconducting spin-valve effect in heterostructures with ferromagnetic Heusler alloy layers journal October 2019
Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires journal November 2019
Bias current dependence of superconducting transition temperature in superconducting spin valve nanowires text January 2019
Superconducting spin-valve effect in heterostructures with ferromagnetic Heusler alloy layers text January 2019