Quantum anomalous Hall effect in ferromagnetic transition metal halides

Huang, Chengxi; Zhou, Jian; Wu, Haiping; Deng, Kaiming; Jena, Puru; Kan, Erjun

doi:10.1103/physrevb.95.045113

Title: Quantum anomalous Hall effect in ferromagnetic transition metal halides

Journal Article · Tue Jan 10 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.95.045113· OSTI ID:1535838

Huang, Chengxi ^[1]; Zhou, Jian ^[2]; Wu, Haiping ^[3]; Deng, Kaiming ^[3]; Jena, Puru ^[2]; Kan, Erjun ^[3]

Nanjing Univ. of Science and Technology (China). Key Lab. of Soft Chemistry and Functional Materials; Virginia Commonwealth Univ., Richmond, VA (United States)
Virginia Commonwealth Univ., Richmond, VA (United States)
Nanjing Univ. of Science and Technology (China). Key Lab. of Soft Chemistry and Functional Materials

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb)₂Te₃ film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that the RuI₃ monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360K using Monte Carlo simulation, is above room temperature and higher than most two-dimensional ferromagnetic thin films. The inclusion of Hubbard U in the Ru-d electrons does not affect this result. Furthemore, we also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds an experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.

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Research Organization:: Virginia Commonwealth Univ., Richmond, VA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities; USDOE

Grant/Contract Number:: FG02-96ER45579; AC02-05CH11231; 11374160; 51522206; 11574151; 30915011203

OSTI ID:: 1535838

Alternate ID(s):: OSTI ID: 1338860

Journal Information:: Physical Review B, Vol. 95, Issue 4; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 83 works

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