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Entanglement properties of Floquet-Chern insulators

Journal Article · · Physical Review B
 [1];  [2];  [2]
  1. New York Univ. (NYU), NY (United States); DOE/OSTI
  2. New York Univ. (NYU), NY (United States)
Results are presented for the entanglement entropy and spectrum of half-filled graphene following the switch on of a circularly polarized laser. The laser parameters are chosen to correspond to several different Floquet-Chern insulator phases. The entanglement properties of the unitarily evolved wave functions are compared with the state where one of the Floquet bands is completely occupied. The true states show a volume law for the entanglement, whereas the Floquet states show an area law. Qualitative differences are found in the entanglement properties of the off-resonant and on-resonant laser. Edge states are found in the entanglement spectrum corresponding to certain physical edge states expected in a Chern insulator. However, some edge states that would be expected from the Floquet band structure are missing from the entanglement spectrum. An analytic theory is developed for the long-time structure of the entanglement spectrum. Finally, it is argued that only edge states corresponding to off-resonant processes appear in the entanglement spectrum.
Research Organization:
New York Univ. (NYU), NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0010821
OSTI ID:
1535801
Alternate ID(s):
OSTI ID: 1332387
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 94; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

Topological marker currents in Chern insulators journal January 2019
Topological Entanglement-Spectrum Crossing in Quench Dynamics journal December 2018
Topological Entanglement-Spectrum Crossing in Quench Dynamics text January 2017

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