Graphene grown out of diamond

Gu, Changzhi; Li, Wuxia; Xu, Jing; Xu, Shicong; Lu, Chao; Xu, Lifang; Li, Junjie; Zhang, Shengbai

doi:10.1063/1.4964710

Title: Graphene grown out of diamond

Journal Article · Wed Oct 19 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4964710· OSTI ID:1535282

Gu, Changzhi ^[1]; Li, Wuxia ^[2]; Xu, Jing ^[3]; Xu, Shicong ^[2]; Lu, Chao ^[2]; Xu, Lifang ^[2]; Li, Junjie ^[2]; Zhang, Shengbai ^[4]

Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences, CAS Key Lab. of Vacuum Physics
Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics
Renmin Univ. of China, Beijing (China). Dept. of Physics
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0002623

OSTI ID:: 1535282

Journal Information:: Applied Physics Letters, Vol. 109, Issue 16; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 14 works

Citation information provided by
Web of Science

References (26)

The superconductivity in boron-doped polycrystalline diamond thick films Wang, Z. L.; Luo, Q.; Liu, L. W. Diamond and Related Materials, Vol. 15, Issue 4-8 https://doi.org/10.1016/j.diamond.2005.12.035	journal	April 2006
High-speed graphene transistors with a self-aligned nanowire gate Liao, Lei; Lin, Yung-Chen; Bao, Mingqiang Nature, Vol. 467, Issue 7313 https://doi.org/10.1038/nature09405	journal	September 2010
Production, properties and potential of graphene Soldano, Caterina; Mahmood, Ather; Dujardin, Erik Carbon, Vol. 48, Issue 8 https://doi.org/10.1016/j.carbon.2010.01.058	journal	July 2010
Coherent Generation of Photo-Thermo-Acoustic Wave from Graphene Sheets Tian, Yichao; Tian, He; Wu, Y. L. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep10582	journal	June 2015
Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide Konishi, Keita; Yoh, Kanji Physica E: Low-dimensional Systems and Nanostructures, Vol. 42, Issue 10 https://doi.org/10.1016/j.physe.2010.06.003	journal	September 2010
Graphene-Nanodiamond Heterostructures and their application to High Current Devices Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep13771	journal	September 2015
Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale Berman, Diana; Deshmukh, Sanket A.; Narayanan, Badri Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12099	journal	July 2016
The radiation hardness properties of γ-ray for SOD circuits fabricated on 4-inch SOD wafer Gu, Changzhi; Sun, Yue; Sun, Ye Diamond and Related Materials, Vol. 11, Issue 3-6 https://doi.org/10.1016/S0925-9635(01)00685-9	journal	March 2002
Properties of graphene produced by the high pressure–high temperature growth process Parvizi, F.; Teweldebrhan, D.; Ghosh, S. Micro & Nano Letters, Vol. 3, Issue 1 https://doi.org/10.1049/mnl:20070074	journal	January 2008
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer Tombros, Nikolaos; Veligura, Alina; Junesch, Juliane Journal of Applied Physics, Vol. 109, Issue 9 https://doi.org/10.1063/1.3579997	journal	May 2011
Thermal properties of graphene and nanostructured carbon materials Balandin, Alexander A. Nature Materials, Vol. 10, Issue 8, p. 569-581 https://doi.org/10.1038/nmat3064	journal	August 2011
Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp² -on-sp³ Technology Yu, Jie; Liu, Guanxiong; Sumant, Anirudha V. Nano Letters, Vol. 12, Issue 3, p. 1603-1608 https://doi.org/10.1021/nl204545q	journal	February 2012
Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices Shi, Zhiwen; Jin, Chenhao; Yang, Wei Nature Physics, Vol. 10, Issue 10 https://doi.org/10.1038/nphys3075	journal	August 2014
Observation of Plasmarons in Quasi-Freestanding Doped Graphene Bostwick, A.; Speck, F.; Seyller, T. Science, Vol. 328, Issue 5981 https://doi.org/10.1126/science.1186489	journal	May 2010
High-frequency, scaled graphene transistors on diamond-like carbon Wu, Yanqing; Lin, Yu-ming; Bol, Ageeth A. Nature, Vol. 472, Issue 7341 https://doi.org/10.1038/nature09979	journal	April 2011
Body-Centered Orthorhombic $C_{16}$ : A Novel Topological Node-Line Semimetal Wang, Jian-Tao; Weng, Hongming; Nie, Simin Physical Review Letters, Vol. 116, Issue 19 https://doi.org/10.1103/PhysRevLett.116.195501	journal	May 2016
100-GHz Transistors from Wafer-Scale Epitaxial Graphene Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A. Science, Vol. 327, Issue 5966, p. 662-662 https://doi.org/10.1126/science.1184289	journal	February 2010
Ab initiomolecular dynamics for liquid metals Kresse, G.; Hafner, J. Physical Review B, Vol. 47, Issue 1, p. 558-561 https://doi.org/10.1103/PhysRevB.47.558	journal	January 1993
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements Look, D. C.; Molnar, R. J. Applied Physics Letters, Vol. 70, Issue 25 https://doi.org/10.1063/1.119176	journal	June 1997
Graphite-like surface reconstructions on C{111} and their implication for n -type diamond Yan, Yanfa; Zhang, S. B.; Al-Jassim, M. M. Physical Review B, Vol. 66, Issue 20 https://doi.org/10.1103/PhysRevB.66.201401	journal	November 2002
Raman spectroscopy in graphene Malard, L. M.; Pimenta, M. A.; Dresselhaus, G. Physics Reports, Vol. 473, Issue 5-6, p. 51-87 https://doi.org/10.1016/j.physrep.2009.02.003	journal	April 2009
Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling Wang, Yue; Perdew, John P. Physical Review B, Vol. 44, Issue 24 https://doi.org/10.1103/PhysRevB.44.13298	journal	December 1991
Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures Chen, Zhi-Guo; Shi, Zhiwen; Yang, Wei Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5461	journal	July 2014
Electronic spin transport and spin precession in single graphene layers at room temperature Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita Nature, Vol. 448, Issue 7153, p. 571-574 https://doi.org/10.1038/nature06037	journal	July 2007

Cited By (2)

Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties Zhang, Ji; Osloub, Ehsan; Siddiqui, Fatima Materials, Vol. 12, Issue 9 https://doi.org/10.3390/ma12091425	journal	May 2019
The Flexible Lubrication Performance of Graphene Used in Diamond Interface as a Solid Lubricant: First-Principles Calculations Wang, Jianjun; Li, Lin; Yang, Wentao Nanomaterials, Vol. 9, Issue 12 https://doi.org/10.3390/nano9121784	journal	December 2019

Similar Records

Diamond as an inert substrate of graphene

Journal Article · Thu Feb 07 00:00:00 EST 2013 · Journal of Chemical Physics · OSTI ID:1535282

Wei, Hu; Zhenyu, Li; Jinlong, Yang

Electronic properties of graphene-single crystal diamond heterostructures

Journal Article · Wed Aug 07 00:00:00 EDT 2013 · Journal of Applied Physics · OSTI ID:1535282

Zhao, Fang; Thuong Nguyen, Thuong; Golsharifi, Mohammad; +2 more

Graphene diamond-like carbon films heterostructure

Journal Article · Mon Mar 09 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1535282

Zhao, Fang; Afandi, Abdulkareem

Related Subjects

36 MATERIALS SCIENCE
physics

Title: Graphene grown out of diamond

Citation Formats

References (26)

Cited By (2)

Similar Records

Related Subjects