Graphene grown out of diamond

Gu, Changzhi; Li, Wuxia; Xu, Jing; Xu, Shicong; Lu, Chao; Xu, Lifang; Li, Junjie; Zhang, Shengbai

doi:10.1063/1.4964710

Graphene grown out of diamond

Journal Article · Wed Oct 19 00:00:00 UTC 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4964710· OSTI ID:1535282

Gu, Changzhi ^[1]; Li, Wuxia ^[2]; Xu, Jing ^[3]; Xu, Shicong ^[2]; Lu, Chao ^[2]; Xu, Lifang ^[2]; Li, Junjie ^[2]; Zhang, Shengbai ^[4]

Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences, CAS Key Lab. of Vacuum Physics; DOE/OSTI
Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics
Renmin Univ. of China, Beijing (China). Dept. of Physics
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

View Accepted Manuscript (DOE)

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0002623

OSTI ID:: 1535282

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 109; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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