Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu 2 Se

Olvera, A. A.; Moroz, N. A.; Sahoo, P.; Ren, P.; Bailey, T. P.; Page, A. A.; Uher, C.; Poudeu, P. F.  P.

doi:10.1039/c7ee01193h

Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu ₂ Se

Journal Article · Sun Jan 01 04:00:00 EST 2017 · Energy & Environmental Science

DOI:https://doi.org/10.1039/c7ee01193h· OSTI ID:1535225

Olvera, A. A. ^[1]; Moroz, N. A. ^[2]; Sahoo, P. ^[2]; Ren, P. ^[3]; ^[3]; Page, A. A. ^[3]; ^[3]; ^[2]

Laboratory for Emerging Energy and Electronic Materials; Department of Materials Science and Engineering; University of Michigan; Ann Arbor; USA; DOE/OSTI
Laboratory for Emerging Energy and Electronic Materials; Department of Materials Science and Engineering; University of Michigan; Ann Arbor; USA
Department of Physics; University of Michigan; Ann Arbor; USA

Thermoelectric figure of merit, ZT, exceeding 2.6 at 850 K and copper electromigration inhibition have been demonstrated in indium modified Cu₂Se.

Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0008574

OSTI ID:: 1535225

Journal Information:: Energy & Environmental Science, Journal Name: Energy & Environmental Science Journal Issue: 7 Vol. 10; ISSN EESNBY; ISSN 1754-5692

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu 2 Se

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Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu ₂ Se