Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry

Laskowski, Forrest A.  L.; Nellist, Michael R.; Venkatkarthick, Radhakrishnan; Boettcher, Shannon W.

doi:10.1039/c6ee03505a

Title: Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry

Journal Article · Sun Jan 01 00:00:00 EST 2017 · Energy & Environmental Science

DOI:https://doi.org/10.1039/c6ee03505a· OSTI ID:1535135

Laskowski, Forrest A. L. ^[1]; Nellist, Michael R. ^[1]; Venkatkarthick, Radhakrishnan ^[2];

^[1]

Department of Chemistry and Biochemistry; University of Oregon; Eugene; USA
Department of Chemistry and Biochemistry; University of Oregon; Eugene; USA; Electroinorganic Chemicals Division

Dual-working-electrode photoelectrochemical techniques are implemented to characterize semiconductor–catalyst–solution interfaces in protected n-Si photoanodesin situfor the first time.

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Research Organization:: Univ. of Oregon, Eugene, OR (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0014279

OSTI ID:: 1535135

Journal Information:: Energy & Environmental Science, Vol. 10, Issue 2; ISSN 1754-5692

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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