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Title: Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry

Abstract

Dual-working-electrode photoelectrochemical techniques are implemented to characterize semiconductor–catalyst–solution interfaces in protected n-Si photoanodesin situfor the first time.

Authors:
 [1];  [1];  [2]; ORCiD logo [1]
  1. Department of Chemistry and Biochemistry; University of Oregon; Eugene; USA
  2. Department of Chemistry and Biochemistry; University of Oregon; Eugene; USA; Electroinorganic Chemicals Division
Publication Date:
Research Org.:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535135
DOE Contract Number:  
SC0014279
Resource Type:
Journal Article
Journal Name:
Energy & Environmental Science
Additional Journal Information:
Journal Volume: 10; Journal Issue: 2; Journal ID: ISSN 1754-5692
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Energy & Fuels; Engineering; Environmental Sciences & Ecology

Citation Formats

Laskowski, Forrest A. L., Nellist, Michael R., Venkatkarthick, Radhakrishnan, and Boettcher, Shannon W. Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry. United States: N. p., 2017. Web. doi:10.1039/c6ee03505a.
Laskowski, Forrest A. L., Nellist, Michael R., Venkatkarthick, Radhakrishnan, & Boettcher, Shannon W. Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry. United States. doi:10.1039/c6ee03505a.
Laskowski, Forrest A. L., Nellist, Michael R., Venkatkarthick, Radhakrishnan, and Boettcher, Shannon W. Sun . "Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry". United States. doi:10.1039/c6ee03505a.
@article{osti_1535135,
title = {Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry},
author = {Laskowski, Forrest A. L. and Nellist, Michael R. and Venkatkarthick, Radhakrishnan and Boettcher, Shannon W.},
abstractNote = {Dual-working-electrode photoelectrochemical techniques are implemented to characterize semiconductor–catalyst–solution interfaces in protected n-Si photoanodesin situfor the first time.},
doi = {10.1039/c6ee03505a},
journal = {Energy & Environmental Science},
issn = {1754-5692},
number = 2,
volume = 10,
place = {United States},
year = {2017},
month = {1}
}

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