Atomic Layer Deposition for Advanced Electrode Design in Photoelectrochemical and Triboelectric Systems

Su, Jingjie; Li, Zhaodong; Yu, Yanhao; Wang, Xudong

doi:10.1002/admi.201600835

Atomic Layer Deposition for Advanced Electrode Design in Photoelectrochemical and Triboelectric Systems

Journal Article · Fri Jan 20 00:00:00 EST 2017 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201600835· OSTI ID:1533049

Su, Jingjie ^[1]; Li, Zhaodong ^[2]; Yu, Yanhao ^[2]; Wang, Xudong ^[3]

Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Nanoenergy and Nanosystems; DOE/OSTI
Univ. of Wisconsin, Madison, WI (United States)
Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Nanoenergy and Nanosystems; Univ. of Wisconsin, Madison, WI (United States)

As a powerful and versatile thin film deposition technique, atomic layer deposition (ALD) has been increasingly involved in the manufacturing of many energy harvesting and storage devices. Next to the applications of ALD in lithium ion batteries and supercapacitors, ALD in photoelectrochemical (PEC) electrode and triboelectric nanogenerators (TENGs) development is relatively new. Most current progress in these two promising directions is not quite comprehensively covered. This article intends to summarize the most recent and representative research regarding the application of ALD in the fabrication of PEC electrodes and TENG active materials. We first discuss ALD of nanostructured electrochemically active materials and surface coating for PEC photoelectrodes, and the corresponding influence on solar energy conversion efficiency and electrode stability are discussed and compared. A unique high-temperature ALD-based approach, called surface-reaction-limited pulsed chemical vapor deposition (SPCVD) is then introduced as a new approach to the synthesis of 3D branched NW architecture, which offers tremendous advantages in photoelectrode design. At last, a new exploration of ALD in the field of mechanical energy harvesting is presented as an effective strategy to modify the dielectric property of polymer thin films for TENG development.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0008711

OSTI ID:: 1533049

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 4 Vol. 4; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Atomic Layer Deposition for Advanced Electrode Design in Photoelectrochemical and Triboelectric Systems

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