Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Chen, Xuegang; Zhang, Xin; Koten, Mark A.; Chen, Hanghui; Xiao, Zhiyong; Zhang, Le; Shield, Jeffrey E.; Dowben, Peter A.; Hong, Xia

doi:10.1002/adma.201701385

Title: Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Journal Article · Mon Jun 19 00:00:00 EDT 2017 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201701385· OSTI ID:1533042

Chen, Xuegang ^[1]; Zhang, Xin ^[1]; Koten, Mark A. ^[2]; Chen, Hanghui ^[3]; Xiao, Zhiyong ^[1]; Zhang, Le ^[1]; Shield, Jeffrey E. ^[2]; Dowben, Peter A. ^[1];

^[1]

Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA
Department of Mechanical and Materials Engineering & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0526 USA
Department of Physics, Columbia University, New York NY 10027 USA; New York University Shanghai, Shanghai 200122 China; NYU-ECNU Institute of Physics, New York University Shanghai, Shanghai 200062 China; Department of Physics, New York University, New York NY 10002 USA

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0016153

OSTI ID:: 1533042

Journal Information:: Advanced Materials, Vol. 29, Issue 31; ISSN 0935-9648

Publisher:: Wiley

Country of Publication:: United States

Language:: English

References (46)

Magnetoelectric Coupling Effects in Multiferroic Complex Oxide Composite Structures Vaz, Carlos A. F.; Hoffman, Jason; Ahn, Charles H. Advanced Materials, Vol. 22, Issue 26-27 https://doi.org/10.1002/adma.200904326	journal	April 2010
Ferroelectric control of a Mott insulator Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02834	journal	October 2013
Enhancing interfacial magnetization with a ferroelectric Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria Physical Review B, Vol. 94, Issue 17 https://doi.org/10.1103/PhysRevB.94.174432	journal	November 2016
Nanoscale Electrostatic Manipulation of Magnetic Flux Quanta in Ferroelectric/Superconductor ${BiFeO}_{3} / {YBa}_{2} {Cu}_{3} O_{7 - δ}$ Heterostructures Crassous, Arnaud; Bernard, Rozenn; Fusil, Stéphane Physical Review Letters, Vol. 107, Issue 24, Article No. 247002 https://doi.org/10.1103/PhysRevLett.107.247002	journal	December 2011
Origin of the Magnetoelectric Coupling Effect in $Pb ({Zr}_{0.2} {Ti}_{0.8}) O_{3} / {La}_{0.8} {Sr}_{0.2} {MnO}_{3}$ Multiferroic Heterostructures Vaz, C. A. F.; Hoffman, J.; Segal, Y. Physical Review Letters, Vol. 104, Issue 12 https://doi.org/10.1103/PhysRevLett.104.127202	journal	March 2010
Dynamical mean-field study of model double-exchange superlattices Lin, Chungwei; Okamoto, Satoshi; Millis, Andrew J. Physical Review B, Vol. 73, Issue 4 https://doi.org/10.1103/PhysRevB.73.041104	journal	January 2006
Epitaxial all‐perovskite ferroelectric field effect transistor with a memory retention Watanabe, Yukio Applied Physics Letters, Vol. 66, Issue 14 https://doi.org/10.1063/1.113362	journal	April 1995
Engineering Correlation Effects via Artificially Designed Oxide Superlattices Chen, Hanghui; Millis, Andrew J.; Marianetti, Chris A. Physical Review Letters, Vol. 111, Issue 11 https://doi.org/10.1103/PhysRevLett.111.116403	journal	September 2013
Thickness-Dependent Crossover from Charge- to Strain-Mediated Magnetoelectric Coupling in Ferromagnetic/Piezoelectric Oxide Heterostructures Spurgeon, Steven R.; Sloppy, Jennifer D.; Kepaptsoglou, Despoina Maria (Demie) ACS Nano, Vol. 8, Issue 1 https://doi.org/10.1021/nn405636c	journal	December 2013
Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate Middey, S.; Rivero, P.; Meyers, D. Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep06819	journal	October 2014
Role of Hybridization in ${Na}_{x} {CoO}_{2}$ and the Effect of Hydration Marianetti, C. A.; Kotliar, G.; Ceder, G. Physical Review Letters, Vol. 92, Issue 19 https://doi.org/10.1103/PhysRevLett.92.196405	journal	May 2004
Charge transfer across transition-metal oxide interfaces: Emergent conductance and electronic structure Chen, Hanghui; Park, Hyowon; Millis, Andrew J. Physical Review B, Vol. 90, Issue 24 https://doi.org/10.1103/PhysRevB.90.245138	journal	December 2014
Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction Kumah, Divine P.; Disa, Ankit S.; Ngai, Joseph H. Advanced Materials, Vol. 26, Issue 12 https://doi.org/10.1002/adma.201304256	journal	February 2014
Electrostatic modification of novel materials Ahn, C. H.; Bhattacharya, A.; Di Ventra, M. Reviews of Modern Physics, Vol. 78, Issue 4, p. 1185-1212 https://doi.org/10.1103/RevModPhys.78.1185	journal	November 2006
Magnetoelectric Devices for Spintronics Fusil, S.; Garcia, V.; Barthélémy, A. Annual Review of Materials Research, Vol. 44, Issue 1 https://doi.org/10.1146/annurev-matsci-070813-113315	journal	July 2014
Intrinsic Ferroelectric Properties of Strained Tetragonal PbZr0.2Ti0.8O3 Obtained on Layer–by–Layer Grown, Defect–Free Single–Crystalline Films Vrejoiu, I.; Le Rhun, G.; Pintilie, L. Advanced Materials, Vol. 18, Issue 13 https://doi.org/10.1002/adma.200502711	journal	July 2006
Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures Mathews, S. Science, Vol. 276, Issue 5310 https://doi.org/10.1126/science.276.5310.238	journal	April 1997
Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral coupling Liao, Z.; Huijben, M.; Zhong, Z. Nature Materials, Vol. 15, Issue 4 https://doi.org/10.1038/nmat4579	journal	March 2016
Examining the screening limit of field effect devices via the metal-insulator transition Hong, X.; Posadas, A.; Ahn, C. H. Applied Physics Letters, Vol. 86, Issue 14 https://doi.org/10.1063/1.1897076	journal	April 2005
Charge transfer and interfacial magnetism in (LaNiO $_{3}$ ) $_{n}$ /(LaMnO $_{3}$ ) $_{2}$ superlattices Hoffman, J.; Tung, I. C.; Nelson-Cheeseman, B. B. Physical Review B, Vol. 88, Issue 14 https://doi.org/10.1103/PhysRevB.88.144411	journal	October 2013
The chips are down for Moore’s law Waldrop, M. Mitchell Nature, Vol. 530, Issue 7589 https://doi.org/10.1038/530144a	journal	February 2016
Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation Rajapitamahuni, A.; Zhang, L.; Koten, M. A. Physical Review Letters, Vol. 116, Issue 18 https://doi.org/10.1103/PhysRevLett.116.187201	journal	May 2016
Magnetoelectric coupling at the EuO/BaTiO ₃ interface Cao, S.; Liu, P.; Tang, J. Applied Physics Letters, Vol. 102, Issue 17 https://doi.org/10.1063/1.4803492	journal	April 2013
Physics of thin-film ferroelectric oxides Dawber, M.; Rabe, K. M.; Scott, J. F. Reviews of Modern Physics, Vol. 77, Issue 4 https://doi.org/10.1103/RevModPhys.77.1083	journal	October 2005
Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications Hoffman, J.; Hong, X.; Ahn, C. H. Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254014	journal	May 2011
Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration Störmer, H. L.; Gossard, A. C.; Wiegmann, W. Applied Physics Letters, Vol. 39, Issue 11 https://doi.org/10.1063/1.92604	journal	December 1981
Evolution of electronic structure across the rare-earth RNiO3 series Freeland, John W.; van Veenendaal, Michel; Chakhalian, Jak Journal of Electron Spectroscopy and Related Phenomena, Vol. 208 https://doi.org/10.1016/j.elspec.2015.07.006	journal	April 2016
Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces Grisolia, M. N.; Varignon, J.; Sanchez-Santolino, G. Nature Physics, Vol. 12, Issue 5 https://doi.org/10.1038/nphys3627	journal	January 2016
High-Temperature Magnetic Insulating Phase in Ultrathin ${La}_{0.67} {Sr}_{0.33} {MnO}_{3}$ Films Boschker, Hans; Kautz, Jaap; Houwman, Evert P. Physical Review Letters, Vol. 109, Issue 15 https://doi.org/10.1103/PhysRevLett.109.157207	journal	October 2012
Ferroelectric control of magnetization in La $_{1 - x}$ Sr $_{x}$ MnO $_{3}$ manganites: A first-principles study Chen, Hanghui; Ismail-Beigi, Sohrab Physical Review B, Vol. 86, Issue 2 https://doi.org/10.1103/PhysRevB.86.024433	journal	July 2012
Probing the metal-insulator transition of NdNiO ₃ by electrostatic doping Son, Junwoo; Jalan, Bharat; Kajdos, Adam P. Applied Physics Letters, Vol. 99, Issue 19 https://doi.org/10.1063/1.3659310	journal	November 2011
Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3 Kitamura, Miho; Horiba, Koji; Kobayashi, Masaki Applied Physics Letters, Vol. 108, Issue 11 https://doi.org/10.1063/1.4944418	journal	March 2016
Effect of electric field doping on the anisotropic magnetoresistance in doped manganites Hong, X.; Yau, J. -B.; Hoffman, J. D. Physical Review B, Vol. 74, Issue 17 https://doi.org/10.1103/PhysRevB.74.174406	journal	November 2006
A field effect transistor based on the Mott transition in a molecular layer Zhou, C.; Newns, D. M.; Misewich, J. A. Applied Physics Letters, Vol. 70, Issue 5 https://doi.org/10.1063/1.118285	journal	February 1997
Effect of strain on ferroelectric field effect in strongly correlated oxide Sm _0.5 Nd _0.5 NiO ₃ Zhang, L.; Chen, X. G.; Gardner, H. J. Applied Physics Letters, Vol. 107, Issue 15 https://doi.org/10.1063/1.4934182	journal	October 2015
Conduction at a Ferroelectric Interface Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S. Physical Review Applied, Vol. 2, Issue 5 https://doi.org/10.1103/PhysRevApplied.2.051001	journal	November 2014
Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO ₃ /LaNiO ₃ Heterostructures Peng, Jingjing; Song, Cheng; Li, Fan ACS Applied Materials & Interfaces, Vol. 7, Issue 32 https://doi.org/10.1021/acsami.5b04994	journal	August 2015
Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni Biesinger, Mark C.; Payne, Brad P.; Grosvenor, Andrew P. Applied Surface Science, Vol. 257, Issue 7, p. 2717-2730 https://doi.org/10.1016/j.apsusc.2010.10.051	journal	January 2011
Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations Hong, Xia Journal of Physics: Condensed Matter, Vol. 28, Issue 10 https://doi.org/10.1088/0953-8984/28/10/103003	journal	February 2016
Strain induced modulation of the correlated transport in epitaxial Sm _0.5 Nd _0.5 NiO ₃ thin films Zhang, L.; Gardner, H. J.; Chen, X. G. Journal of Physics: Condensed Matter, Vol. 27, Issue 13 https://doi.org/10.1088/0953-8984/27/13/132201	journal	March 2015
Electronic structure and the metal-insulator transition in LnNiO ₃ (Ln=La, Pr, Nd, Sm and Ho): bandstructure results Sarma, D. D.; Shanthi, N.; Mahadevan, P. Journal of Physics: Condensed Matter, Vol. 6, Issue 48 https://doi.org/10.1088/0953-8984/6/48/008	journal	November 1994
Probing the metal-insulator transition of NdNiO3 by electrostatic doping Son, Junwoo; Jalan, Bharat; Kajdos, Adam P. arXiv https://doi.org/10.48550/arxiv.1110.4134	text	January 2011
Ferroelectric control of magnetization in La_{1-x}Sr_xMnO3 manganites: A first-principle study Chen, Hanghui; Ismail-Beigi, Sohrab arXiv https://doi.org/10.48550/arxiv.1208.2219	text	January 2012
Evolution of Electronic Structure Across the Rare-Earth RNiO$_3$ Series Freeland, John W.; van Veenendaal, Michel; Chakhalian, Jak arXiv https://doi.org/10.48550/arxiv.1504.02802	preprint	January 2015
Effect of Strain on Ferroelectric Field Effect in Strongly Correlated Oxide Sm$_{0.5}$Nd$_{0.5}$NiO$_3$ Zhang, L.; Chen, X. G.; Gardner, H. J. arXiv https://doi.org/10.48550/arxiv.1509.05493	text	January 2015
Physics of thin-film ferroelectric oxides Dawber, M.; Rabe, K. M.; Scott, J. F. arXiv https://doi.org/10.48550/arxiv.cond-mat/0503372	text	January 2005

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Conductive Oxide Interfaces for Field Effect Devices Kornblum, Lior Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900480	journal	June 2019
Ferroelectric phase transition induced relaxation of electroresistance in La _0.67 Sr _0.33 MnO ₃ /BaTiO ₃ heterostructures Wang, Yuchen; Zheng, Dongxing; Wang, Zeyang Journal of Applied Physics, Vol. 125, Issue 16 https://doi.org/10.1063/1.5086921	journal	April 2019
Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state Zhu, Shouhui; Sun, Bai; Ranjan, Shubham APL Materials, Vol. 7, Issue 8 https://doi.org/10.1063/1.5100019	journal	August 2019
Polarization Orientation in Lead Zirconate Titanate (001) Thin Films Driven by the Interface with the Substrate Tănase, Liviu C.; Abramiuc, Laura E.; Popescu, Dana G. Physical Review Applied, Vol. 10, Issue 3 https://doi.org/10.1103/physrevapplied.10.034020	journal	September 2018
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Rare-earth nickelates R NiO ₃ : thin films and heterostructures Catalano, S.; Gibert, M.; Fowlie, J. Reports on Progress in Physics, Vol. 81, Issue 4 https://doi.org/10.1088/1361-6633/aaa37a	journal	February 2018

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