Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

doi:10.1002/adma.201701385

Title: Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Abstract

Not provided.

Authors:

Chen, Xuegang ^[1]; Zhang, Xin ^[1]; Koten, Mark A. ^[2]; Chen, Hanghui ^[3]; Xiao, Zhiyong ^[1]; Zhang, Le ^[1]; Shield, Jeffrey E. ^[2]; Dowben, Peter A. ^[1];

^[1]

Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA
Department of Mechanical and Materials Engineering & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0526 USA
Department of Physics, Columbia University, New York NY 10027 USA; New York University Shanghai, Shanghai 200122 China; NYU-ECNU Institute of Physics, New York University Shanghai, Shanghai 200062 China; Department of Physics, New York University, New York NY 10002 USA

Publication Date:: 2017-06-19

Research Org.:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1533042

DOE Contract Number:: SC0016153

Resource Type:: Journal Article

Journal Name:: Advanced Materials

Additional Journal Information:: Journal Volume: 29; Journal Issue: 31; Journal ID: ISSN 0935-9648

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats


                    Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors.  United States: N. p., 2017. 
        Web.  doi:10.1002/adma.201701385.

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                    Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., & Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors.  United States.  doi:10.1002/adma.201701385.

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                    Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Mon .  
        "Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors".  United States.  doi:10.1002/adma.201701385.

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@article{osti_1533042,

  title        = {Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors},

  author       = {Chen, Xuegang and Zhang, Xin and Koten, Mark A. and Chen, Hanghui and Xiao, Zhiyong and Zhang, Le and Shield, Jeffrey E. and Dowben, Peter A. and Hong, Xia},

  abstractNote = {Not provided.},

  doi          = {10.1002/adma.201701385},

  journal      = {Advanced Materials},

  issn         = {0935-9648},

  number       = 31,

  volume       = 29,

  place        = {United States},

  year         = {2017},

  month        = {6}

}

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DOI: 10.1002/adma.201701385

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Works referenced in this record:

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Title: Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Abstract

Citation Formats

Electrostatic modification of novel materials journal, November 2006

Magnetoelectric Coupling Effects in Multiferroic Complex Oxide Composite Structures journal, April 2010

Magnetoelectric Devices for Spintronics journal, July 2014

Nanoscale Electrostatic Manipulation of Magnetic Flux Quanta in Ferroelectric/Superconductor BiFeO 3 / YBa 2 Cu 3 O 7 − δ Heterostructures journal, December 2011

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The chips are down for Moore’s law journal, February 2016

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Examining the screening limit of field effect devices via the metal-insulator transition journal, April 2005

Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications journal, May 2011

Ferroelectric control of a Mott insulator journal, October 2013

Conduction at a Ferroelectric Interface journal, November 2014

Magnetoelectric coupling at the EuO/BaTiO 3 interface journal, April 2013

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Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration journal, December 1981

Physics of thin-film ferroelectric oxides journal, October 2005

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Ferroelectric control of magnetization in La 1 − x Sr x MnO 3 manganites: A first-principles study journal, July 2012

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Dynamical mean-field study of model double-exchange superlattices journal, January 2006

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Electrostatic modification of novel materials
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Magnetoelectric Coupling Effects in Multiferroic Complex Oxide Composite Structures
journal, April 2010

Magnetoelectric Devices for Spintronics
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Nanoscale Electrostatic Manipulation of Magnetic Flux Quanta in Ferroelectric/Superconductor ${BiFeO}_{3} / {YBa}_{2} {Cu}_{3} O_{7 - δ}$ Heterostructures
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Effect of electric field doping on the anisotropic magnetoresistance in doped manganites
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Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction
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Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral coupling
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Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation
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Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces
journal, January 2016

Engineering Correlation Effects via Artificially Designed Oxide Superlattices
journal, September 2013

Charge transfer across transition-metal oxide interfaces: Emergent conductance and electronic structure
journal, December 2014

Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3
journal, March 2016

Dynamical mean-field study of model double-exchange superlattices
journal, January 2006

Probing the metal-insulator transition of NdNiO ₃ by electrostatic doping
journal, November 2011

Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO ₃ /LaNiO ₃ Heterostructures
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Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni
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Evolution of electronic structure across the rare-earth RNiO3 series
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Role of Hybridization in ${Na}_{x} {CoO}_{2}$ and the Effect of Hydration
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