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Title: Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors


Not provided.

 [1];  [1];  [2];  [3];  [1];  [1];  [2];  [1]; ORCiD logo [1]
  1. Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA
  2. Department of Mechanical and Materials Engineering & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0526 USA
  3. Department of Physics, Columbia University, New York NY 10027 USA; New York University Shanghai, Shanghai 200122 China; NYU-ECNU Institute of Physics, New York University Shanghai, Shanghai 200062 China; Department of Physics, New York University, New York NY 10002 USA
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
DOE Contract Number:  
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 31; Journal ID: ISSN 0935-9648
Country of Publication:
United States
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States: N. p., 2017. Web. doi:10.1002/adma.201701385.
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., & Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States. doi:10.1002/adma.201701385.
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Mon . "Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors". United States. doi:10.1002/adma.201701385.
title = {Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors},
author = {Chen, Xuegang and Zhang, Xin and Koten, Mark A. and Chen, Hanghui and Xiao, Zhiyong and Zhang, Le and Shield, Jeffrey E. and Dowben, Peter A. and Hong, Xia},
abstractNote = {Not provided.},
doi = {10.1002/adma.201701385},
journal = {Advanced Materials},
issn = {0935-9648},
number = 31,
volume = 29,
place = {United States},
year = {2017},
month = {6}

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