Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory
A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357; W-31109-ENG-38
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- Patent Number(s):
- 8,424,175
- Application Number:
- 12/556,771
- OSTI ID:
- 1531850
- Country of Publication:
- United States
- Language:
- English
Diamond AFM probe with piezoelectric sensor and actuator
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conference | January 2003 |
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