Method for forming diffusion regions in a silicon substrate
Patent
·
OSTI ID:1531803
A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
- Research Organization:
- SunPower Corp., San Jose, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 9,018,033
- Application Number:
- 14/061,422
- OSTI ID:
- 1531803
- Country of Publication:
- United States
- Language:
- English
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