Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

Atwater, Jr., Harry A.; Zahler, James M.

Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

Patent · 27 March 2006

OSTI ID:1531507

Atwater, Jr., Harry A.; Zahler, James M.

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

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Research Organization:: California Inst. of Technology, Pasadena, CA (United States)

Sponsoring Organization:: USDOE

Assignee:: California Institute of Technology (Pasadena, CA)

Patent Number(s):: 7,019,339

Application Number:: 10/125,133

OSTI ID:: 1531507

Country of Publication:: United States

Language:: English

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