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Title: Aliovalent substitutions of the 2D layered semiconductor GeAs

Authors:
; ;  [1]
  1. Ames
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
DOE - BASIC ENERGY SCIENCES
OSTI Identifier:
1531007
Resource Type:
Journal Article
Journal Name:
J. Solid State Chem.
Additional Journal Information:
Journal Volume: 276; Journal Issue: 08, 2019
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Lee, Shannon, Owens-Baird, Bryan, Kovnir, Kirill, and Iowa State). Aliovalent substitutions of the 2D layered semiconductor GeAs. United States: N. p., 2019. Web. doi:10.1016/j.jssc.2019.05.016.
Lee, Shannon, Owens-Baird, Bryan, Kovnir, Kirill, & Iowa State). Aliovalent substitutions of the 2D layered semiconductor GeAs. United States. doi:10.1016/j.jssc.2019.05.016.
Lee, Shannon, Owens-Baird, Bryan, Kovnir, Kirill, and Iowa State). Mon . "Aliovalent substitutions of the 2D layered semiconductor GeAs". United States. doi:10.1016/j.jssc.2019.05.016.
@article{osti_1531007,
title = {Aliovalent substitutions of the 2D layered semiconductor GeAs},
author = {Lee, Shannon and Owens-Baird, Bryan and Kovnir, Kirill and Iowa State)},
abstractNote = {},
doi = {10.1016/j.jssc.2019.05.016},
journal = {J. Solid State Chem.},
number = 08, 2019,
volume = 276,
place = {United States},
year = {2019},
month = {7}
}