Molecular Engineering for Large Open-Circuit Voltage and Low Energy Loss in Around 10% Non-fullerene Organic Photovoltaics

He, Bo; Yang, Bin; Kolaczkowski, Matthew A.; Anderson, Christopher A.; Klivansky, Liana M.; Chen, Teresa L.; Brady, Michael A.; Liu, Yi

doi:10.1021/acsenergylett.8b00366

Molecular Engineering for Large Open-Circuit Voltage and Low Energy Loss in Around 10% Non-fullerene Organic Photovoltaics

Journal Article · Tue Mar 27 00:00:00 EDT 2018 · ACS Energy Letters

DOI:https://doi.org/10.1021/acsenergylett.8b00366· OSTI ID:1530352

^[1]; Yang, Bin ^[2]; Kolaczkowski, Matthew A. ^[1]; Anderson, Christopher A. ^[1]; Klivansky, Liana M. ^[1]; Chen, Teresa L. ^[1]; Brady, Michael A. ^[1]; ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Hunan Univ., Hunan (China)

Recent efforts in organic photovoltaics (OPVs) have been devoted to obtaining low-bandgap non-fullerene acceptors (NFAs) for high photocurrent generation. However, the low-lying lowest unoccupied molecular orbital (LUMO) level in narrow bandgap NFAs typically results in a small energy difference (ΔE_DA) between the LUMO of the acceptor and the highest occupied molecular orbital (HOMO) of the donor, leading to low open-circuit voltage (V_OC). The trade-off between ΔE_DA and photocurrent generation significantly limits the simultaneous enhancement of both V_OC and short-circuit current density (J_SC). Here, we report a new medium-bandgap NFA, IDTT-T, containing a weakly electron-withdrawing N-ethyl thiabarbituric acid terminal group on each end of the indacenodithienothiophene (IDTT) core. When paired with a benchmark low-bandgap PTB7-th polymer donor, simultaneous enhancement of both ΔE_DA and absorption spectral coverage was realized. The OPV devices yield a V_OC of 1.01 V, corresponding to a low energy loss of 0.57 eV in around 10% efficiency single-junction NFA OPVs. In conclusion, the design demonstrates a working principle to concurrently increase ΔE_DA and photocurrent generation for high V_OC and PCE in bulk fullerene-free heterojunction OPVs.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530352

Journal Information:: ACS Energy Letters, Journal Name: ACS Energy Letters Journal Issue: 4 Vol. 3; ISSN 2380-8195

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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